Channel length effects on the characteristic of submicron nLDD-mosfet exposed to gamma radiation /

Channel length effects on the characteristic of submicron nLDD-mosfet exposed to gamma radiation /

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Thesis (Sarjana Sains (Fizik)) - Universiti Teknologi Malaysia, 2014

Bibliographic Details
Main Authors:	Siti Norsheila Zahari, 1989- , author, Hazri Bakhtiar, supervisor, Wan Muhamad Saridan Wan Hassan, supervisor, Fakulti Sains
Format:
Language:	eng
Published:	Johor Bahru, Johor : Universiti Teknologi Malaysia, 2014
Subjects:	Gamma rays Metal oxide semiconductor field-effect transistors

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