First principal study of structural, electronic and optical properties of AIN, GaN, InN and BN compounds [electronic resource] /
Thesis (Sarjana Sains (Fizik)) - Universiti Teknologi Malaysia, 2013
Main Authors: | Al-Sardia, Mowafaq Mohammad Kethyan, 1982- author, M. Alam Saeed, Ahmad Radzi Mat Isa, supervisor, Fakulti Sains |
---|---|
Format: | |
Language: | eng |
Published: |
2013
|
Subjects: |
Similar Items
-
First principal study of structural, electronic and optical properties of AIN, GaN, InN and BN compounds /
by: Al-Sardia, Mowafaq Mohammad Kethyan, 1982- author, et al.
Published: (2013) -
First-principles study of structural, electronic and optical properties of AIN, GaN, InN AND BN compounds /
by: Al-Sardia, Mowafaq Mohammad Kethyan, 1982-, et al.
Published: (2013) -
First-principles study of structural, electronic and optical properties of AlN, GaN, InN and BN compounds
by: Al-Sardia, Mowafaq Mohammad Kethyan
Published: (2013) -
Reliability of W-Band InAIN/GaN High Electron Mobility Transistors
by: Wu, Yufei, Ph. D. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Published: (2017) -
Strain Relief Analysis of InN Quantum Dots Grown on GaN
by: Ruffenach Sandra, et al.
Published: (2007-01-01)