The influence of vacancies defects on electronic and transport properties of AB-stacked bilayer graphene transistor/
Project Paper (Sarjana Muda Kejuruteraan (Elektrik - Elektronik)) - Universiti Teknologi Malaysia, 2015
Main Authors: | Premeela A/P Ramasamy, 1991-, Yusmeeraz Yusof, Fakulti Kejuruteraan Elektrik |
---|---|
Format: | |
Language: | eng |
Published: |
Johor Bharu Universiti Teknologi Malaysia
2016
|
Subjects: |
Similar Items
-
The influence of vacancies defects on electronic and transport properties of AB-stacked bilayer graphene transistor [electronic resource]/
by: Premeela A/P Ramasamy, 1991-
Published: (2016) -
Modelling of low-dimensional hamiltonian for vacancy defects in graphene nanoribbon /
by: Chong, Wee Khang, 1995- , author, et al.
Published: (2018) -
Two-dimensional atomic modeling of single layer graphene with point defects /
by: Wong, Vincent Kah Bin, 1990- author, et al.
Published: (2016) -
Transport and thermoelectric properties of bernal stacked bilayer graphene due to lattice vibrations and magnetic field
by: F. Azizi, et al.
Published: (2025-02-01) -
Analytical modelling short channel effects in double gate bilayer graphene field effect transistors /
by: Mehdi Saeidmanesh, 1982-, author, et al.
Published: (2015)