Performance evaluation of 3-d n-chanel and p-channel twin silicon nanowire mosfet (TSNWFET) [elecronic resource] /

Performance evaluation of 3-d n-chanel and p-channel twin silicon nanowire mosfet (TSNWFET) [elecronic resource] /

Project Paper (Sarjana Muda Kejuruteraan (Elektrik - Elektronik)) - Universiti teknologi Malaysia, 2017

Bibliographic Details
Main Author:	Muhammad Nurhaziq Haridan, 1993-, author
Format:
Language:	eng
Published:	2017
Subjects:	Metal oxide semiconductor field-effect transistors

Similar Items

Performance evaluation of 3-d n-chanel and p-channel twin silicon nanowire mosfet (TSNWFET) /
by: Muhammad Nurhaziq Haridan, 1993-, author, et al.
Published: (2017)

Current-voltage characteristics and model for short-chanel MOSFET /
by: Fakrulradzi Idris, 1984-, et al.
Published: (2007)

Current-voltage characteristics and model for short-chanel MOSFET [electronic resource] /
by: Fakrulradzi Idris, 1984-, et al.
Published: (2007)

Design and characterisation of biaxial strained silicon N-channel MOSFET /
by: 521413 Lau, Ngei Ong, et al.
Published: (2010)

Design and characterisation of biaxial strained silicon N-channel MOSFET [electronic resource] /
by: 521413 Lau, Ngei Ong
Published: (2010)

Design and characterisation of strained silicon MOSFET /
by: 275773 Goh, Eunice Shing Mei, et al.
Published: (2007)

Design and characterisation of strained silicon MOSFET [electronic resource] /
by: 275773 Goh, Eunice Shing Mei, et al.
Published: (2007)

Characterization of tri-material gate n-channel MOSFET [electronic resource] /
by: 552022 Nadia Othman
Published: (2010)

Characterization of tri-material gate n-channel MOSFET /
by: Nadia Othman, et al.
Published: (2010)

Development of partially and fully depleted silicon-on-insulator MOSFET using tcad tools /
by: Teoh, Shu Wen, 1986-, et al.
Published: (2010)

Power mosfet design /
by: 285393 Taylor, B. E.
Published: (1993)

The development of vertical mosfet model incorporating a dielectric pocket /
by: 227744 Nurul Ezaila Alias, et al.
Published: (2009)

The development of vertical mosfet model incorporating a dielectric pocket /
by: 227744 Nurul Ezaila Alias, et al.
Published: (2009)

Two-dimensional analytical threshold voltage model of nanoscale strained silicon MOSFET with tri-material gate /
by: Muhamad Syahir Tumaran, 1987-, et al.
Published: (2010)

Simulation of 0.18 micron MOSFET and its characterization /
by: 398154 Syafeeza Ahmad Radzi
Published: (2005)

Semi - empirical capacitance modeling for mosfet /
by: 275510 Chai, Chun Vui, et al.
Published: (2008)

Mosfet circuit debounces power relay /
by: 390063 Venditti, Carlo

Mosfet modeling for circuit analysis and design /
by: 372891 Galup-Montoro, Carlos, et al.
Published: (2007)

Characterization of double gate silicon on insulator (SOI) MOSFET /
by: Zaharah Johari, 1985-, et al.
Published: (2008)

Design of nanoscale vertical impact ionization metal oxide semiconductor field effect transistor (MOSFET) for short channel effect control [electronic resource] /
by: Muhammad Aiman Md. Shariff, 1988-, author
Published: (2011)

The influence of corner effects in double gate vertical mosfet [electronic resource]/
by: Khalidah Abdullah, 1986-, et al.
Published: (2010)

Mosfet circuits guidebook-with 100 tested projects/
by: 275027 Turner, Rufus P.
Published: (1976)

Design of nanoscale vertical impact ionization metal oxide semiconductor field effect transistor (MOSFET) for short channel effect control /
by: Muhammad Aiman Md. Shariff, 1988-, author, et al.
Published: (2011)

Characterization of silicon - on - insulator (SOI) mosfet using TCAD tools [electronic resource] /
by: 247481 Yeoh, Chun Jern, et al.
Published: (2007)

Characterization of silicon - on - insulator (SOI) mosfet using TCAD tools /
by: 247481 Yeoh, Chun Jern, et al.
Published: (2007)

Simulation of 0.18 micron mosfet and its characterization [compact disc]
by: 398154 Syafeeza Ahmad Radzi
Published: (2005)

Physical and chemical characterization of oxide/germanium interfaces in ge mosfet [electronic resource] /
by: Nur Shazwani Yunus, 1992-, et al.
Published: (2015)

The influence of corner effects in double gate vertical mosfet /
by: Khalidah Abdullah, 1986-, et al.
Published: (2010)

Modeling of lightly of doped drain (LDD) mosfet for circuit simulation /
by: Vijay K. Arora, et al.
Published: (2008)

Physical and chemical characterization of oxide/germanium interfaces in ge mosfet /
by: Nur Shazwani Yunus, 1992-, et al.
Published: (2015)

The physics and modeling of MOSFETs : surface-potential model HiSIM /
by: 240092 Miura-Mattausch, Mitiko, et al.
Published: (2008)

Relliability behaviors of HCI and NBTI on 3-D planar mosfet and novel finfet [electronic resource]/
by: Rahimah Hassan, 1992-
Published: (2016)

Advanced fabrication techniques for designing nanoscale mosfet [electronic resource] /
by: 266516 Wong, Suei Huey, et al.
Published: (2007)

Channel length effects on the characteristic of submicron nLDD-mosfet exposed to gamma radiation /
by: Siti Norsheila Zahari, 1989- , author, et al.
Published: (2014)

Channel length effects on the characteristic of submicron nLDD-mosfet exposed to gamma radiation /
by: Siti Norsheila Zahari, 1989- , author, et al.
Published: (2014)

Optimization of N-channel silicon nanowire field effect transistor using Taguchi method /
by: Nurul Eryana Wahab, 1991-, author, et al.
Published: (2018)

Optimization of N-channel silicon nanowire field effect transistor using Taguchi method /
by: Nurul Eryana Wahab, 1991-, author, et al.
Published: (2018)

Relliability behaviors of HCI and NBTI on 3-D planar mosfet and novel finfet/
by: Rahimah Hassan, 1992-, et al.
Published: (2016)

Advanced fabrication techniques for designing nanoscale mosfet /
by: 266516 Wong, Suei Huey, et al.
Published: (2007)

Design and analysis of double gate vertical MOSFET (VMOSFET) comparison between source on top and drain on top [electronic resource] /
by: 554353 Ungku Noor Yasmin Ungku Mohd. Yunus
Published: (2010)