Fabrication of reduced graphene oxide/silicon back-to-back schottky diode using polydimethylsiloxane stamping /
Project Paper (Sarjana Muda Kejuruteraan (Elektrik - Elektronik)) - Universiti Teknologi Malaysia, 2017
| Huvudupphovsmän: | , , |
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| Materialtyp: | |
| Språk: | eng |
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Johor Bahru, Johor : Universiti Teknologi Malaysia,
2017
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| Ämnen: |
| _version_ | 1826466172409741312 |
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| author | Wan Fahim Asqalani Wan Yusof, 1994- , author Shaharin Fadzli Abd. Rahman, 1983- , supervisor Fakulti Kejuruteraan Elektrik |
| author_facet | Wan Fahim Asqalani Wan Yusof, 1994- , author Shaharin Fadzli Abd. Rahman, 1983- , supervisor Fakulti Kejuruteraan Elektrik |
| author_sort | Wan Fahim Asqalani Wan Yusof, 1994- , author |
| collection | OCEAN |
| description | Project Paper (Sarjana Muda Kejuruteraan (Elektrik - Elektronik)) - Universiti Teknologi Malaysia, 2017 |
| first_indexed | 2024-03-05T15:45:01Z |
| format | |
| id | KOHA-OAI-TEST:544658 |
| institution | Universiti Teknologi Malaysia - OCEAN |
| language | eng |
| last_indexed | 2024-03-05T15:45:01Z |
| publishDate | 2017 |
| publisher | Johor Bahru, Johor : Universiti Teknologi Malaysia, |
| record_format | dspace |
| spelling | KOHA-OAI-TEST:5446582020-12-19T17:20:34ZFabrication of reduced graphene oxide/silicon back-to-back schottky diode using polydimethylsiloxane stamping / Wan Fahim Asqalani Wan Yusof, 1994- , author Shaharin Fadzli Abd. Rahman, 1983- , supervisor Fakulti Kejuruteraan Elektrik Johor Bahru, Johor : Universiti Teknologi Malaysia,2017engProject Paper (Sarjana Muda Kejuruteraan (Elektrik - Elektronik)) - Universiti Teknologi Malaysia, 2017Bibliography: p. 38-40.FEELECTLDiodes, Semiconductor |
| spellingShingle | Diodes, Semiconductor Wan Fahim Asqalani Wan Yusof, 1994- , author Shaharin Fadzli Abd. Rahman, 1983- , supervisor Fakulti Kejuruteraan Elektrik Fabrication of reduced graphene oxide/silicon back-to-back schottky diode using polydimethylsiloxane stamping / |
| title | Fabrication of reduced graphene oxide/silicon back-to-back schottky diode using polydimethylsiloxane stamping / |
| title_full | Fabrication of reduced graphene oxide/silicon back-to-back schottky diode using polydimethylsiloxane stamping / |
| title_fullStr | Fabrication of reduced graphene oxide/silicon back-to-back schottky diode using polydimethylsiloxane stamping / |
| title_full_unstemmed | Fabrication of reduced graphene oxide/silicon back-to-back schottky diode using polydimethylsiloxane stamping / |
| title_short | Fabrication of reduced graphene oxide/silicon back-to-back schottky diode using polydimethylsiloxane stamping / |
| title_sort | fabrication of reduced graphene oxide silicon back to back schottky diode using polydimethylsiloxane stamping |
| topic | Diodes, Semiconductor |
| work_keys_str_mv | AT wanfahimasqalaniwanyusof1994author fabricationofreducedgrapheneoxidesiliconbacktobackschottkydiodeusingpolydimethylsiloxanestamping AT shaharinfadzliabdrahman1983supervisor fabricationofreducedgrapheneoxidesiliconbacktobackschottkydiodeusingpolydimethylsiloxanestamping AT fakultikejuruteraanelektrik fabricationofreducedgrapheneoxidesiliconbacktobackschottkydiodeusingpolydimethylsiloxanestamping |