Gate-all-around floating-gate (GAA-FG) with variable oxide thickness for nonvolatile memory /

Project Paper (Sarjana Muda Kejuruteraan (Elektrik - Elektronik)) - Universiti Teknologi Malaysia, 2018

Bibliographic Details
Main Author:	Muhammad Faris Bahrudin, 1995-, author
Format:
Language:	eng
Published:	Johor Bahru, Johor : Universiti Teknologi Malaysia, 2018
Subjects:	Metal oxide semiconductor field-effecttransistors

Gate-all-around floating-gate (GAA-FG) with variable oxide thickness for nonvolatile memory / by Muhammad Faris Bahrudin, 1995-, author, Nurul Ezaila Alias, supervisor, Fakulti Kejuruteraan Elektrik

Published 2018