Charge-based compact model of gate-all-around floating gate nanowire with variable oxide thickness for flash memory cell /
Thesis (Doktor Falsafah) - Universiti Teknologi Malaysia, 2018
Main Authors: | Muhammad Afiq Nurudin Hamzah, 1988-, author, Razali Ismail, supervisor, Nurul Ezaila Alias, supervisor, Fakulti Kejuruteraan Elektrik |
---|---|
Format: | |
Language: | eng |
Published: |
Johor Bahru, Johor : Universiti Teknologi Malaysia,
2018
|
Similar Items
-
Charge-based compact model of gate-all-around floating gate nanowire with variable oxide thickness for flash memory cell /
by: Muhammad Afiq Nurudin Hamzah, 1988-, author
Published: (2013) -
Charge-based compact model of gate-all-around floating gate nanowire with variable oxide thickness for flash memory cell
by: Hamzah, Muhammad Afiq Nurudin
Published: (2018) -
Variable oxide thickness optimization and reliability analysis of gate-all-around floating gate for flash memory cell /
by: Farah A. Hamid, 1990-, author 644819, et al.
Published: (2020) -
Low-voltage high-speed programming gate-all-around floating gate memory cell with tunnel barrier engineering
by: Hamzah, Afiq, et al.
Published: (2018) -
Gate-all-around floating-gate (GAA-FG) with variable oxide thickness for nonvolatile memory /
by: Muhammad Faris Bahrudin, 1995-, author, et al.
Published: (2018)