Explicit charge-based model for strained-silicon gate-all-around mosfet including quantum and short channel effects /

Explicit charge-based model for strained-silicon gate-all-around mosfet including quantum and short channel effects /

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Bibliographic Details
Main Authors:	Fatimah Khairiah Abd. Hamid, 1988-, author 560361, Razali Ismail, supervisor 225727, Nurul Ezaila Alias, supervisor 227744, Fakulti Kejuruteraan. Sekolah Kejuruteraaan Elektrik 619066
Format:	text
Language:	eng
Published:	Johor Bahru, Johor : Universiti Teknologi Malaysia, 2020
Subjects:	Subject

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