Explicit charge-based model for strained-silicon gate-all-around mosfet including quantum and short channel effects /

Explicit charge-based model for strained-silicon gate-all-around mosfet including quantum and short channel effects /

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Bibliographic Details
Main Author: Fatimah Khairiah Abd. Hamid, 1988- author 560361
Format: text
Language:eng
Published: Johor Bahru, Johor : Universiti Teknologi Malaysia, 2020
Subjects:
Subject

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