Damage mechanics-based model for reliability assessment of through-silicon via interconnects /

Схожі ресурси

• Damage mechanics-based model for reliability assessment of through-silicon via interconnects /
  за авторством: Mohammad Amirul Affiz Afripin, 1987-, author 541882
  Опубліковано: (2020)
• Temperature and strain-rate dependent damage-based models for lead-free solder interconnects /
  за авторством: Siti Faizah Mad Asasaari, 1987-, author 641413, та інші
  Опубліковано: (2021)
• Characterisation of electroless deposition parameter of copper on silicon wafer for through silicon via application /
  за авторством: Shazatul Akmaliah Mior Shahidin, 1982-, author 291310, та інші
  Опубліковано: (2019)
• Boundary element method analysis of ICCP system for coating defect of underground pipeline structure /
  за авторством: Izzati Erlena Abdul Rahman, 1997-, author 641107, та інші
  Опубліковано: (2020)
• Effect of annealing process on mechanical properties and residual stress in cold drawn steel wires /
  за авторством: Saidatul Norlaila Afiza Zaidi, 1997-, author 641253, та інші
  Опубліковано: (2020)