Optimization of Nanowires Ratio in Nano-scale SiNWT Based SRAM Cell
This paper represents the impact of nanowires ratio of silicon nanowire transistors on the characteristics of 6-transistors SRAM cell. This study is the first to demonstrate nanowires ratio optimization of Nano-scale SiNWT Based SRAM Cell. Noise margins and inflection voltage of transfer character...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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EDP Sciences, 2015
2015
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| Online Access: | http://umpir.ump.edu.my/id/eprint/11600/1/matecconf_iceim2015_01009.pdf |
| _version_ | 1825822669529939968 |
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| author | Naif, Yasir Hasyim Alsibai, Mohammad Hayyan Abdul Manap, Sulastri |
| author_facet | Naif, Yasir Hasyim Alsibai, Mohammad Hayyan Abdul Manap, Sulastri |
| author_sort | Naif, Yasir Hasyim |
| collection | UMP |
| description | This paper represents the impact of nanowires ratio of silicon nanowire transistors on the characteristics of
6-transistors SRAM cell. This study is the first to demonstrate nanowires ratio optimization of Nano-scale SiNWT
Based SRAM Cell. Noise margins and inflection voltage of transfer characteristics are used as limiting factors in this optimization. Results indicate that optimization depends on both nanowires ratio and digital voltage level (Vdd). And increasing of logic voltage level from 1V to 3V tends to decreasing in optimization ratio but with increasing in current and power. SRAM using nanowires transistors must use logic level (2V or 2.5V) to produce SRAM with lower dimensions and lower inflection currents and then with lower power consumption. |
| first_indexed | 2024-03-06T12:00:03Z |
| format | Article |
| id | UMPir11600 |
| institution | Universiti Malaysia Pahang |
| language | English |
| last_indexed | 2024-03-06T12:00:03Z |
| publishDate | 2015 |
| publisher | EDP Sciences, 2015 |
| record_format | dspace |
| spelling | UMPir116002018-02-02T07:15:02Z http://umpir.ump.edu.my/id/eprint/11600/ Optimization of Nanowires Ratio in Nano-scale SiNWT Based SRAM Cell Naif, Yasir Hasyim Alsibai, Mohammad Hayyan Abdul Manap, Sulastri Not Available This paper represents the impact of nanowires ratio of silicon nanowire transistors on the characteristics of 6-transistors SRAM cell. This study is the first to demonstrate nanowires ratio optimization of Nano-scale SiNWT Based SRAM Cell. Noise margins and inflection voltage of transfer characteristics are used as limiting factors in this optimization. Results indicate that optimization depends on both nanowires ratio and digital voltage level (Vdd). And increasing of logic voltage level from 1V to 3V tends to decreasing in optimization ratio but with increasing in current and power. SRAM using nanowires transistors must use logic level (2V or 2.5V) to produce SRAM with lower dimensions and lower inflection currents and then with lower power consumption. EDP Sciences, 2015 2015 Article PeerReviewed application/pdf en cc_by http://umpir.ump.edu.my/id/eprint/11600/1/matecconf_iceim2015_01009.pdf Naif, Yasir Hasyim and Alsibai, Mohammad Hayyan and Abdul Manap, Sulastri (2015) Optimization of Nanowires Ratio in Nano-scale SiNWT Based SRAM Cell. MATEC Web of Conferences, 27. pp. 1-5. ISSN 2261-236X. (Published) http://dx.doi.org/10.1051/matecconf/20152701009 10.1051/matecconf/20152701009 |
| spellingShingle | Not Available Naif, Yasir Hasyim Alsibai, Mohammad Hayyan Abdul Manap, Sulastri Optimization of Nanowires Ratio in Nano-scale SiNWT Based SRAM Cell |
| title | Optimization of Nanowires Ratio in Nano-scale SiNWT Based SRAM Cell |
| title_full | Optimization of Nanowires Ratio in Nano-scale SiNWT Based SRAM Cell |
| title_fullStr | Optimization of Nanowires Ratio in Nano-scale SiNWT Based SRAM Cell |
| title_full_unstemmed | Optimization of Nanowires Ratio in Nano-scale SiNWT Based SRAM Cell |
| title_short | Optimization of Nanowires Ratio in Nano-scale SiNWT Based SRAM Cell |
| title_sort | optimization of nanowires ratio in nano scale sinwt based sram cell |
| topic | Not Available |
| url | http://umpir.ump.edu.my/id/eprint/11600/1/matecconf_iceim2015_01009.pdf |
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