The influence of growth temperature on the properties of zinc oxide by thermal oxidation
Zinc thin films were successfully deposited on Si substrate by thermal evaporation method under constant base pressure of 1.604x10-4 Pa. Thermal oxidation of the deposited film was carried out at two different growth temperatures of 300oC and 500oC. The effects of growth temperature on the propertie...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Sprog: | English English |
| Udgivet: |
The Malaysian Analytical Sciences Society
2018
|
| Fag: | |
| Online adgang: | http://umpir.ump.edu.my/id/eprint/21111/1/The%20influence%20of%20growth%20temperature-fkp-2018.pdf http://umpir.ump.edu.my/id/eprint/21111/7/The%20influence%20of%20growth%20temperature-fkp-2018-1.pdf |