Temperature sensitivity of silicon nanowire transistor based on channel length

Temperature sensitivity of silicon nanowire transistor based on channel length

This paper investigates the temperature sensitivity of Silicon Nanowire Transistor (SiNWT) depends on the gate length, and also presents the possibility of using it as a Nano- temperature sensor. The MuGFET simulation tool was used to investigate temperature characteristics of the nanowire. Current-...

Bibliográfalaš dieđut
Váldodahkkit:	AlAriqi, Hani Taha, Jabbar, Waheb A., Hashim, Yasir, Hadi, Manap
Materiálatiipa:	Conference or Workshop Item
Giella:	English
Almmustuhtton:	IEEE 2019
Fáttát:	T Technology (General)
Liŋkkat:	http://umpir.ump.edu.my/id/eprint/24710/1/44.2%20Temperature%20sensitivity%20of%20silicon%20nanowire%20transistor%20based%20on%20channel%20length.pdf

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