Effects of downscaling channel dimensions on electrical characteristics of InAs-FinFET transistor
In this paper, we present the impact of downscaling of nano-channel dimensions of Indium Arsenide Fin Feld Effect Transistor (InAs- FinFET) on electrical characteristics of the transistor, in particular; (i) ION/IOFF ratio, (ii) Subthreshold Swing (SS), Threshold voltage (VT), and Drain-induced barr...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Institute of Advanced Engineering and Science (IAES)
2019
|
| Subjects: | |
| Online Access: | http://umpir.ump.edu.my/id/eprint/25655/1/Effects%20of%20downscaling%20channel%20dimensions%20on%20electrical.pdf |
| _version_ | 1825812833717190656 |
|---|---|
| author | Mahmood, Ahmed Jabbar, Waheb A. Hashim, Yasir Hadi, Manap |
| author_facet | Mahmood, Ahmed Jabbar, Waheb A. Hashim, Yasir Hadi, Manap |
| author_sort | Mahmood, Ahmed |
| collection | UMP |
| description | In this paper, we present the impact of downscaling of nano-channel dimensions of Indium Arsenide Fin Feld Effect Transistor (InAs- FinFET) on electrical characteristics of the transistor, in particular; (i) ION/IOFF ratio, (ii) Subthreshold Swing (SS), Threshold voltage (VT), and Drain-induced barrier lowering (DIBL). MuGFET simulation tool was utilized to simulate and compare the considered characteristics based on variable channel dimensions: length, width and oxide thickness. The results demonstrate that the best performance of InAs- FinFET was achieved with channel length = 25 nm, width= 5 nm, and oxide thickness between 1.5 to 2.5 nm according to the selected scaling factor (K = 0.125). |
| first_indexed | 2024-03-06T12:35:00Z |
| format | Article |
| id | UMPir25655 |
| institution | Universiti Malaysia Pahang |
| language | English |
| last_indexed | 2024-03-06T12:35:00Z |
| publishDate | 2019 |
| publisher | Institute of Advanced Engineering and Science (IAES) |
| record_format | dspace |
| spelling | UMPir256552019-08-16T07:49:38Z http://umpir.ump.edu.my/id/eprint/25655/ Effects of downscaling channel dimensions on electrical characteristics of InAs-FinFET transistor Mahmood, Ahmed Jabbar, Waheb A. Hashim, Yasir Hadi, Manap TK Electrical engineering. Electronics Nuclear engineering In this paper, we present the impact of downscaling of nano-channel dimensions of Indium Arsenide Fin Feld Effect Transistor (InAs- FinFET) on electrical characteristics of the transistor, in particular; (i) ION/IOFF ratio, (ii) Subthreshold Swing (SS), Threshold voltage (VT), and Drain-induced barrier lowering (DIBL). MuGFET simulation tool was utilized to simulate and compare the considered characteristics based on variable channel dimensions: length, width and oxide thickness. The results demonstrate that the best performance of InAs- FinFET was achieved with channel length = 25 nm, width= 5 nm, and oxide thickness between 1.5 to 2.5 nm according to the selected scaling factor (K = 0.125). Institute of Advanced Engineering and Science (IAES) 2019 Article PeerReviewed pdf en cc_by_nc_4 http://umpir.ump.edu.my/id/eprint/25655/1/Effects%20of%20downscaling%20channel%20dimensions%20on%20electrical.pdf Mahmood, Ahmed and Jabbar, Waheb A. and Hashim, Yasir and Hadi, Manap (2019) Effects of downscaling channel dimensions on electrical characteristics of InAs-FinFET transistor. International Journal of Electrical and Computer Engineering (IJECE), 9 (4). pp. 2902-2909. ISSN 2088-8708. (Published) http://ijece.iaescore.com/index.php/IJECE/article/view/15510 http://doi.org/10.11591/ijece.v9i4.pp%25p |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Mahmood, Ahmed Jabbar, Waheb A. Hashim, Yasir Hadi, Manap Effects of downscaling channel dimensions on electrical characteristics of InAs-FinFET transistor |
| title | Effects of downscaling channel dimensions on electrical characteristics of InAs-FinFET transistor |
| title_full | Effects of downscaling channel dimensions on electrical characteristics of InAs-FinFET transistor |
| title_fullStr | Effects of downscaling channel dimensions on electrical characteristics of InAs-FinFET transistor |
| title_full_unstemmed | Effects of downscaling channel dimensions on electrical characteristics of InAs-FinFET transistor |
| title_short | Effects of downscaling channel dimensions on electrical characteristics of InAs-FinFET transistor |
| title_sort | effects of downscaling channel dimensions on electrical characteristics of inas finfet transistor |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| url | http://umpir.ump.edu.my/id/eprint/25655/1/Effects%20of%20downscaling%20channel%20dimensions%20on%20electrical.pdf |
| work_keys_str_mv | AT mahmoodahmed effectsofdownscalingchanneldimensionsonelectricalcharacteristicsofinasfinfettransistor AT jabbarwaheba effectsofdownscalingchanneldimensionsonelectricalcharacteristicsofinasfinfettransistor AT hashimyasir effectsofdownscalingchanneldimensionsonelectricalcharacteristicsofinasfinfettransistor AT hadimanap effectsofdownscalingchanneldimensionsonelectricalcharacteristicsofinasfinfettransistor |