Characterization of silicon nanowire transistor
This paper analyses the temperature sensitivity of Silicon Nanowire Transistor (SiNWT) depends on the diameter (D.ch) of channel. In addition, it also investigates the possibility of utilizing SiNWT as a Nano- temperature sensor. The MuGFET simulation tool has been utilized to conduct a comprehensiv...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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Universitas Ahmad Dahlan
2019
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| Online Access: | http://umpir.ump.edu.my/id/eprint/26234/1/Characterization%20of%20silicon%20nanowire%20transistor.pdf |
| _version_ | 1825812940994904064 |
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| author | Al Ariqi, Hani Taha Jabbar, Waheb A. Hashim, Yasir Hadi, Manap |
| author_facet | Al Ariqi, Hani Taha Jabbar, Waheb A. Hashim, Yasir Hadi, Manap |
| author_sort | Al Ariqi, Hani Taha |
| collection | UMP |
| description | This paper analyses the temperature sensitivity of Silicon Nanowire Transistor (SiNWT) depends on the diameter (D.ch) of channel. In addition, it also investigates the possibility of utilizing SiNWT as a Nano- temperature sensor. The MuGFET simulation tool has been utilized to conduct a comprehensive simulation to evaluate both electrical and temperature characteristics of SiNWT. Current-voltage characteristics with different values of temperature and with a varying diameter of the Nano wire channel (D.ch = 80, 40, 20 and 10 nm), were simulated. Diode operating mode connection of the transistor is suggested for measuring the temperature sensitivity of SiNWT. As simulation results demonstrated, the best temperature sensitivity was occurred at lower temperature with increasing the channel diameter. We also illustrate the impact of varying temperature and channel diameter on electrical characteristics of SiNWT including, Subthreshold Swing (SS), Threshold voltage (V.th), and Drain-induced barrier lowering (DIBL), which were proportionally increased with the operating temperature. |
| first_indexed | 2024-03-06T12:36:36Z |
| format | Article |
| id | UMPir26234 |
| institution | Universiti Malaysia Pahang |
| language | English |
| last_indexed | 2024-03-06T12:36:36Z |
| publishDate | 2019 |
| publisher | Universitas Ahmad Dahlan |
| record_format | dspace |
| spelling | UMPir262342019-10-25T09:03:04Z http://umpir.ump.edu.my/id/eprint/26234/ Characterization of silicon nanowire transistor Al Ariqi, Hani Taha Jabbar, Waheb A. Hashim, Yasir Hadi, Manap TK Electrical engineering. Electronics Nuclear engineering This paper analyses the temperature sensitivity of Silicon Nanowire Transistor (SiNWT) depends on the diameter (D.ch) of channel. In addition, it also investigates the possibility of utilizing SiNWT as a Nano- temperature sensor. The MuGFET simulation tool has been utilized to conduct a comprehensive simulation to evaluate both electrical and temperature characteristics of SiNWT. Current-voltage characteristics with different values of temperature and with a varying diameter of the Nano wire channel (D.ch = 80, 40, 20 and 10 nm), were simulated. Diode operating mode connection of the transistor is suggested for measuring the temperature sensitivity of SiNWT. As simulation results demonstrated, the best temperature sensitivity was occurred at lower temperature with increasing the channel diameter. We also illustrate the impact of varying temperature and channel diameter on electrical characteristics of SiNWT including, Subthreshold Swing (SS), Threshold voltage (V.th), and Drain-induced barrier lowering (DIBL), which were proportionally increased with the operating temperature. Universitas Ahmad Dahlan 2019 Article PeerReviewed pdf en cc_by_4 http://umpir.ump.edu.my/id/eprint/26234/1/Characterization%20of%20silicon%20nanowire%20transistor.pdf Al Ariqi, Hani Taha and Jabbar, Waheb A. and Hashim, Yasir and Hadi, Manap (2019) Characterization of silicon nanowire transistor. Telkomnika, 17 (6). pp. 2860-2866. ISSN 1693-6930. (Published) http://www.journal.uad.ac.id/index.php/TELKOMNIKA/article/view/13084 http://dx.doi.org/10.12928/telkomnika.v17i6.13084 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Al Ariqi, Hani Taha Jabbar, Waheb A. Hashim, Yasir Hadi, Manap Characterization of silicon nanowire transistor |
| title | Characterization of silicon nanowire transistor |
| title_full | Characterization of silicon nanowire transistor |
| title_fullStr | Characterization of silicon nanowire transistor |
| title_full_unstemmed | Characterization of silicon nanowire transistor |
| title_short | Characterization of silicon nanowire transistor |
| title_sort | characterization of silicon nanowire transistor |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| url | http://umpir.ump.edu.my/id/eprint/26234/1/Characterization%20of%20silicon%20nanowire%20transistor.pdf |
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