Temperature characteristics of FinFET based on channel fin width and working voltage
This paper shows the temperature sensitivity of FinFET and the possibility of using FinFET as a temperature Nano sensor based on Fin width of transistor. The multi-gate field effect transistor (MuGFET) simulation tool is used to examine the temperature effect on FinFET characteristics. Current-volta...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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Institute of Advanced Engineering and Science (IAES)
2020
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| Online Access: | http://umpir.ump.edu.my/id/eprint/29266/1/Temperature%20characteristics%20of%20FinFET%20based%20on%20channel%20fin.pdf |
| _version_ | 1825813491919880192 |
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| author | Atalla, Yousif Hashim, Yasir Abdul Nasir, Abd Ghafar Jabbar, Waheb A. |
| author_facet | Atalla, Yousif Hashim, Yasir Abdul Nasir, Abd Ghafar Jabbar, Waheb A. |
| author_sort | Atalla, Yousif |
| collection | UMP |
| description | This paper shows the temperature sensitivity of FinFET and the possibility of using FinFET as a temperature Nano sensor based on Fin width of transistor. The multi-gate field effect transistor (MuGFET) simulation tool is used to examine the temperature effect on FinFET characteristics. Current-voltage characteristics with various temperatures and channel Fin width (WF= 5,10,20,40 and 80 nm) are at first simulated, the diode mode connection has been used in this study. The best temperature sensitivity of the FinFET is has been considered under the biggest ∆I at the working voltage VDD with range of 0–5 V. According to the results, the temperature sensitivity increased linearly with all the range of channel Fin width (5-80 nm), also, the lower gate Fin width (WF=5nm) with higher sensitivity can achieved with lower working voltage (VDD=1.25 V). |
| first_indexed | 2024-03-06T12:44:49Z |
| format | Article |
| id | UMPir29266 |
| institution | Universiti Malaysia Pahang |
| language | English |
| last_indexed | 2024-03-06T12:44:49Z |
| publishDate | 2020 |
| publisher | Institute of Advanced Engineering and Science (IAES) |
| record_format | dspace |
| spelling | UMPir292662022-02-28T03:39:37Z http://umpir.ump.edu.my/id/eprint/29266/ Temperature characteristics of FinFET based on channel fin width and working voltage Atalla, Yousif Hashim, Yasir Abdul Nasir, Abd Ghafar Jabbar, Waheb A. TK Electrical engineering. Electronics Nuclear engineering This paper shows the temperature sensitivity of FinFET and the possibility of using FinFET as a temperature Nano sensor based on Fin width of transistor. The multi-gate field effect transistor (MuGFET) simulation tool is used to examine the temperature effect on FinFET characteristics. Current-voltage characteristics with various temperatures and channel Fin width (WF= 5,10,20,40 and 80 nm) are at first simulated, the diode mode connection has been used in this study. The best temperature sensitivity of the FinFET is has been considered under the biggest ∆I at the working voltage VDD with range of 0–5 V. According to the results, the temperature sensitivity increased linearly with all the range of channel Fin width (5-80 nm), also, the lower gate Fin width (WF=5nm) with higher sensitivity can achieved with lower working voltage (VDD=1.25 V). Institute of Advanced Engineering and Science (IAES) 2020-12 Article PeerReviewed pdf en cc_by_sa_4 http://umpir.ump.edu.my/id/eprint/29266/1/Temperature%20characteristics%20of%20FinFET%20based%20on%20channel%20fin.pdf Atalla, Yousif and Hashim, Yasir and Abdul Nasir, Abd Ghafar and Jabbar, Waheb A. (2020) Temperature characteristics of FinFET based on channel fin width and working voltage. International Journal of Electrical and Computer Engineering (IJECE), 10 (6). pp. 5650-5657. ISSN 2088-8708. (Published) http://doi.org/10.11591/ijece.v10i6.pp5650-5657 http://doi.org/10.11591/ijece.v10i6.pp5650-5657 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Atalla, Yousif Hashim, Yasir Abdul Nasir, Abd Ghafar Jabbar, Waheb A. Temperature characteristics of FinFET based on channel fin width and working voltage |
| title | Temperature characteristics of FinFET based on channel fin width and working voltage |
| title_full | Temperature characteristics of FinFET based on channel fin width and working voltage |
| title_fullStr | Temperature characteristics of FinFET based on channel fin width and working voltage |
| title_full_unstemmed | Temperature characteristics of FinFET based on channel fin width and working voltage |
| title_short | Temperature characteristics of FinFET based on channel fin width and working voltage |
| title_sort | temperature characteristics of finfet based on channel fin width and working voltage |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| url | http://umpir.ump.edu.my/id/eprint/29266/1/Temperature%20characteristics%20of%20FinFET%20based%20on%20channel%20fin.pdf |
| work_keys_str_mv | AT atallayousif temperaturecharacteristicsoffinfetbasedonchannelfinwidthandworkingvoltage AT hashimyasir temperaturecharacteristicsoffinfetbasedonchannelfinwidthandworkingvoltage AT abdulnasirabdghafar temperaturecharacteristicsoffinfetbasedonchannelfinwidthandworkingvoltage AT jabbarwaheba temperaturecharacteristicsoffinfetbasedonchannelfinwidthandworkingvoltage |