A new factor for fabrication technologies evaluation for silicon nanowire transistors
This paper reviews the fabrication technologies of silicon nanowire transistors (SiNWTs) and rapidly development in this area, as this paper presents various types of SiNWT structures, development of SiNWT properties and different applications until nowadays. This research provides a good comparison...
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Format: | Article |
Language: | English |
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University Ahmad Dahlan (UAD)
2020
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Online Access: | http://umpir.ump.edu.my/id/eprint/30136/1/12121-46543-1-PB.pdf |
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author | Hashim, Yasir Shakib, Mohammed Nazmus |
author_facet | Hashim, Yasir Shakib, Mohammed Nazmus |
author_sort | Hashim, Yasir |
collection | UMP |
description | This paper reviews the fabrication technologies of silicon nanowire transistors (SiNWTs) and rapidly development in this area, as this paper presents various types of SiNWT structures, development of SiNWT properties and different applications until nowadays. This research provides a good comparison among fabrication technologies of SiNWTs depending on a new factor DIF, this factor depends on the size of channel and power consumption in channel. As a result of this comparison, the best technology to use in the future to fabricate silicon nano transistors for future ICs is AFM nanolithography. |
first_indexed | 2024-03-06T12:46:54Z |
format | Article |
id | UMPir30136 |
institution | Universiti Malaysia Pahang |
language | English |
last_indexed | 2024-03-06T12:46:54Z |
publishDate | 2020 |
publisher | University Ahmad Dahlan (UAD) |
record_format | dspace |
spelling | UMPir301362020-12-11T06:53:22Z http://umpir.ump.edu.my/id/eprint/30136/ A new factor for fabrication technologies evaluation for silicon nanowire transistors Hashim, Yasir Shakib, Mohammed Nazmus TK Electrical engineering. Electronics Nuclear engineering This paper reviews the fabrication technologies of silicon nanowire transistors (SiNWTs) and rapidly development in this area, as this paper presents various types of SiNWT structures, development of SiNWT properties and different applications until nowadays. This research provides a good comparison among fabrication technologies of SiNWTs depending on a new factor DIF, this factor depends on the size of channel and power consumption in channel. As a result of this comparison, the best technology to use in the future to fabricate silicon nano transistors for future ICs is AFM nanolithography. University Ahmad Dahlan (UAD) 2020-10 Article PeerReviewed pdf en http://umpir.ump.edu.my/id/eprint/30136/1/12121-46543-1-PB.pdf Hashim, Yasir and Shakib, Mohammed Nazmus (2020) A new factor for fabrication technologies evaluation for silicon nanowire transistors. A new factor for fabrication technologies evaluation for silicon nanowire transistors, 18 (5). pp. 2597-2605. ISSN 1693-6930. (Published) http://dx.doi.org/10.12928/telkomnika.v18i5.12121 http://dx.doi.org/10.12928/telkomnika.v18i5.12121 |
spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Hashim, Yasir Shakib, Mohammed Nazmus A new factor for fabrication technologies evaluation for silicon nanowire transistors |
title | A new factor for fabrication technologies evaluation for silicon nanowire transistors |
title_full | A new factor for fabrication technologies evaluation for silicon nanowire transistors |
title_fullStr | A new factor for fabrication technologies evaluation for silicon nanowire transistors |
title_full_unstemmed | A new factor for fabrication technologies evaluation for silicon nanowire transistors |
title_short | A new factor for fabrication technologies evaluation for silicon nanowire transistors |
title_sort | new factor for fabrication technologies evaluation for silicon nanowire transistors |
topic | TK Electrical engineering. Electronics Nuclear engineering |
url | http://umpir.ump.edu.my/id/eprint/30136/1/12121-46543-1-PB.pdf |
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