The impact of channel fin width on electrical characteristics of Si-FinFET
This paper studies the impact of fin width of channel on temperature and electrical characteristics of fin field-effect transistor (FinFET). The simulation tool multi-gate field effect transistor (MuGFET) has been used to examine the FinFET characteristics. Transfer characteristics with various temp...
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| Format: | Article |
| Language: | English |
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Institute of Advanced Engineering and Science (IAES)
2022
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| Online Access: | http://umpir.ump.edu.my/id/eprint/32529/1/The%20impact%20of%20channel%20fin%20width%20on%20electrical%20characteristics.pdf |
| _version_ | 1825814056886337536 |
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| author | Atalla, Yousif Hashim, Yasir Abdul Nasir, Abd Ghafar |
| author_facet | Atalla, Yousif Hashim, Yasir Abdul Nasir, Abd Ghafar |
| author_sort | Atalla, Yousif |
| collection | UMP |
| description | This paper studies the impact of fin width of channel on temperature and electrical characteristics of fin field-effect transistor (FinFET). The simulation tool multi-gate field effect transistor (MuGFET) has been used to examine the FinFET characteristics. Transfer characteristics with various temperatures and channel fin width (WF=5, 10, 20, 40, and 80 nm) are at first simulated in this study. The results show that the increasing of environmental temperature tends to increase threshold voltage, while the subthreshold swing (SS) and drain-induced barrier lowering (DIBL) rise with rising working temperature. Also, the threshold voltage decreases with increasing channel fin width of transistor, while the SS and DIBL increase with increasing channel fin width of transistor, at minimum channel fin width, the SS is very near to the best and ideal then its value grows and going far from the ideal value with increasing channel fin width. So, according to these conditions, the minimum value as possible of fin width is the preferable one for FinFET with better electrical characteristics. |
| first_indexed | 2024-03-06T12:53:11Z |
| format | Article |
| id | UMPir32529 |
| institution | Universiti Malaysia Pahang |
| language | English |
| last_indexed | 2024-03-06T12:53:11Z |
| publishDate | 2022 |
| publisher | Institute of Advanced Engineering and Science (IAES) |
| record_format | dspace |
| spelling | UMPir325292021-11-11T06:28:29Z http://umpir.ump.edu.my/id/eprint/32529/ The impact of channel fin width on electrical characteristics of Si-FinFET Atalla, Yousif Hashim, Yasir Abdul Nasir, Abd Ghafar TK Electrical engineering. Electronics Nuclear engineering This paper studies the impact of fin width of channel on temperature and electrical characteristics of fin field-effect transistor (FinFET). The simulation tool multi-gate field effect transistor (MuGFET) has been used to examine the FinFET characteristics. Transfer characteristics with various temperatures and channel fin width (WF=5, 10, 20, 40, and 80 nm) are at first simulated in this study. The results show that the increasing of environmental temperature tends to increase threshold voltage, while the subthreshold swing (SS) and drain-induced barrier lowering (DIBL) rise with rising working temperature. Also, the threshold voltage decreases with increasing channel fin width of transistor, while the SS and DIBL increase with increasing channel fin width of transistor, at minimum channel fin width, the SS is very near to the best and ideal then its value grows and going far from the ideal value with increasing channel fin width. So, according to these conditions, the minimum value as possible of fin width is the preferable one for FinFET with better electrical characteristics. Institute of Advanced Engineering and Science (IAES) 2022-02 Article PeerReviewed pdf en cc_by_sa_4 http://umpir.ump.edu.my/id/eprint/32529/1/The%20impact%20of%20channel%20fin%20width%20on%20electrical%20characteristics.pdf Atalla, Yousif and Hashim, Yasir and Abdul Nasir, Abd Ghafar (2022) The impact of channel fin width on electrical characteristics of Si-FinFET. International Journal of Electrical and Computer Engineering (IJECE), 12 (1). pp. 201-207. ISSN 2088-8708. (Published) http://ijece.iaescore.com/index.php/IJECE/article/view/24038 http://ijece.iaescore.com/index.php/IJECE/article/view/24038 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Atalla, Yousif Hashim, Yasir Abdul Nasir, Abd Ghafar The impact of channel fin width on electrical characteristics of Si-FinFET |
| title | The impact of channel fin width on electrical characteristics of
Si-FinFET |
| title_full | The impact of channel fin width on electrical characteristics of
Si-FinFET |
| title_fullStr | The impact of channel fin width on electrical characteristics of
Si-FinFET |
| title_full_unstemmed | The impact of channel fin width on electrical characteristics of
Si-FinFET |
| title_short | The impact of channel fin width on electrical characteristics of
Si-FinFET |
| title_sort | impact of channel fin width on electrical characteristics of si finfet |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| url | http://umpir.ump.edu.my/id/eprint/32529/1/The%20impact%20of%20channel%20fin%20width%20on%20electrical%20characteristics.pdf |
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