The impact of channel fin width on electrical characteristics of Si-FinFET
This paper studies the impact of fin width of channel on temperature and electrical characteristics of fin field-effect transistor (FinFET). The simulation tool multi-gate field effect transistor (MuGFET) has been used to examine the FinFET characteristics. Transfer characteristics with various temp...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Institute of Advanced Engineering and Science (IAES)
2022
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| Subjects: | |
| Online Access: | http://umpir.ump.edu.my/id/eprint/32529/1/The%20impact%20of%20channel%20fin%20width%20on%20electrical%20characteristics.pdf |