Electrical and magnetic properties of antiferromagnetic semiconductor MnSi2N4 monolayer
Two-dimensional antiferromagnetic semiconductors have triggered significant attention due to their unique physical properties and broad application. Based on first-principles calculations, a novel two-dimensional (2D) antiferromagnetic material MnSi2N4 monolayer is predicted. The calculation results...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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Frontiers Media S.A.
2022-12-01
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| Series: | Frontiers in Chemistry |
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| Online Access: | https://www.frontiersin.org/articles/10.3389/fchem.2022.1103704/full |
| _version_ | 1811300784899358720 |
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| author | Dongke Chen Dongke Chen Zhengyu Jiang Ying Tang Junlei Zhou Yuzhou Gu Jing-Jing He Jiaren Yuan |
| author_facet | Dongke Chen Dongke Chen Zhengyu Jiang Ying Tang Junlei Zhou Yuzhou Gu Jing-Jing He Jiaren Yuan |
| author_sort | Dongke Chen |
| collection | DOAJ |
| description | Two-dimensional antiferromagnetic semiconductors have triggered significant attention due to their unique physical properties and broad application. Based on first-principles calculations, a novel two-dimensional (2D) antiferromagnetic material MnSi2N4 monolayer is predicted. The calculation results show that the two-dimensional MnSi2N4 prefers an antiferromagnetic state with a small band gap of 0.26 eV. MnSi2N4 has strong antiferromagnetic coupling which can be effectively tuned under strain. Interestingly, the MnSi2N4 monolayer exhibits a half-metallic ferromagnetic properties under an external magnetic field, in which the spin-up electronic state displays a metallic property, while the spin-down electronic state exhibits a semiconducting characteristic. Therefore, 100% spin polarization can be achieved. Two-dimensional MnSi2N4 monolayer has potential application in the field of high-density information storage and spintronic devices. |
| first_indexed | 2024-04-13T06:56:31Z |
| format | Article |
| id | doaj.art-0010d113aaa7461fb0ab3703f016837c |
| institution | Directory Open Access Journal |
| issn | 2296-2646 |
| language | English |
| last_indexed | 2024-04-13T06:56:31Z |
| publishDate | 2022-12-01 |
| publisher | Frontiers Media S.A. |
| record_format | Article |
| series | Frontiers in Chemistry |
| spelling | doaj.art-0010d113aaa7461fb0ab3703f016837c2022-12-22T02:57:13ZengFrontiers Media S.A.Frontiers in Chemistry2296-26462022-12-011010.3389/fchem.2022.11037041103704Electrical and magnetic properties of antiferromagnetic semiconductor MnSi2N4 monolayerDongke Chen0Dongke Chen1Zhengyu Jiang2Ying Tang3Junlei Zhou4Yuzhou Gu5Jing-Jing He6Jiaren Yuan7School of Physics and Materials Science Nanchang University, Nanchang, ChinaSchool of Physics and Electronic Engineering, Jiangsu University, Zhenjiang, ChinaSchool of Physics and Electronic Engineering, Jiangsu University, Zhenjiang, ChinaSchool of Physics and Electronic Engineering, Jiangsu University, Zhenjiang, ChinaSchool of Physics and Electronic Engineering, Jiangsu University, Zhenjiang, ChinaSchool of Physics and Electronic Engineering, Jiangsu University, Zhenjiang, ChinaCollege of Information Science and Technology, Nanjing Forestry University, Nanjing, ChinaSchool of Physics and Materials Science Nanchang University, Nanchang, ChinaTwo-dimensional antiferromagnetic semiconductors have triggered significant attention due to their unique physical properties and broad application. Based on first-principles calculations, a novel two-dimensional (2D) antiferromagnetic material MnSi2N4 monolayer is predicted. The calculation results show that the two-dimensional MnSi2N4 prefers an antiferromagnetic state with a small band gap of 0.26 eV. MnSi2N4 has strong antiferromagnetic coupling which can be effectively tuned under strain. Interestingly, the MnSi2N4 monolayer exhibits a half-metallic ferromagnetic properties under an external magnetic field, in which the spin-up electronic state displays a metallic property, while the spin-down electronic state exhibits a semiconducting characteristic. Therefore, 100% spin polarization can be achieved. Two-dimensional MnSi2N4 monolayer has potential application in the field of high-density information storage and spintronic devices.https://www.frontiersin.org/articles/10.3389/fchem.2022.1103704/fulltwo-dimensional materialsantiferromagnetic semiconductorhalf metalselectronic propertiesbiaxial strain |
| spellingShingle | Dongke Chen Dongke Chen Zhengyu Jiang Ying Tang Junlei Zhou Yuzhou Gu Jing-Jing He Jiaren Yuan Electrical and magnetic properties of antiferromagnetic semiconductor MnSi2N4 monolayer Frontiers in Chemistry two-dimensional materials antiferromagnetic semiconductor half metals electronic properties biaxial strain |
| title | Electrical and magnetic properties of antiferromagnetic semiconductor MnSi2N4 monolayer |
| title_full | Electrical and magnetic properties of antiferromagnetic semiconductor MnSi2N4 monolayer |
| title_fullStr | Electrical and magnetic properties of antiferromagnetic semiconductor MnSi2N4 monolayer |
| title_full_unstemmed | Electrical and magnetic properties of antiferromagnetic semiconductor MnSi2N4 monolayer |
| title_short | Electrical and magnetic properties of antiferromagnetic semiconductor MnSi2N4 monolayer |
| title_sort | electrical and magnetic properties of antiferromagnetic semiconductor mnsi2n4 monolayer |
| topic | two-dimensional materials antiferromagnetic semiconductor half metals electronic properties biaxial strain |
| url | https://www.frontiersin.org/articles/10.3389/fchem.2022.1103704/full |
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