Review of Nanosheet Transistors Technology

Review of Nanosheet Transistors Technology

Nano-sheet transistor can be defined as a stacked horizontally gate surrounding the channel on all direction. This new structure is earning extremely attention from research to cope the restriction of current Fin Field Effect Transistor (FinFET) structure. To further understand the characteristics o...

Full description

Bibliographic Details
Main Authors:	Firas .. Agha, Yasir .. Naif, Mohammed .. Shakib
Format:	Article
Language:	English
Published:	Tikrit University 2021-05-01
Series:	Tikrit Journal of Engineering Sciences
Subjects:	finfet nanowire gaa sub-threshold swing
Online Access:	http://tj-es.com/vol28no1pa5/

Similar Items

Review of Nanosheet Transistors Technology
by: Firas N. A. Hassan Agha, et al.
Published: (2021-05-01)

The Artificial Neuron: Built From Nanosheet Transistors to Achieve Ultra Low Power Consumption
by: I. Munavar Sheriff, et al.
Published: (2024-01-01)

Comparison of Various Factors Affected TID Tolerance in FinFET and Nanowire FET
by: Hyeonjae Won, et al.
Published: (2019-08-01)

Benchmarking of FinFET, Nanosheet, and Nanowire FET Architectures for Future Technology Nodes
by: Daniel Nagy, et al.
Published: (2020-01-01)

On the Vertically Stacked Gate-All-Around Nanosheet and Nanowire Transistor Scaling beyond the 5 nm Technology Node
by: Hei Wong, et al.
Published: (2022-05-01)

DFT based estimation of CNT parameters and simulation-study of GAA CNTFET for nano scale applications
by: Bhoop Singh, et al.
Published: (2020-01-01)

Series Resistance Reduction in Stacked Nanowire FETs for 7-nm CMOS Technology
by: Anil Kumar Bansal, et al.
Published: (2016-01-01)

Design Optimization of Double-Gate Isosceles Trapezoid Tunnel Field-Effect Transistor (DGIT-TFET)
by: Hwa Young Gu, et al.
Published: (2019-03-01)

Negative Capacitance Transistor to Address the Fundamental Limitations in Technology Scaling: Processor Performance
by: Hussam Amrouch, et al.
Published: (2018-01-01)

RF Performance Benchmark of Nanosheets, Nanowires, FinFETs, and TreeFETs
by: Hsin-Cheng Lin, et al.
Published: (2024-01-01)

Analysis of Threshold Voltage Flexibility in Ultrathin-BOX SOI FinFETs
by: Kazuhiko Endo, et al.
Published: (2014-05-01)

Optimization of GaAs Nanowire Pin Junction Array Solar Cells by Using AlGaAs/GaAs Heterojunctions
by: Yao Wu, et al.
Published: (2018-04-01)

Narrow Sub-Fin Technique for Suppressing Parasitic-Channel Effect in Stacked Nanosheet Transistors
by: Jie Gu, et al.
Published: (2022-01-01)

Combining Chemical Functionalization and FinFET Geometry for Field Effect Sensors as Accessible Technology to Optimize pH Sensing
by: Dipti Rani, et al.
Published: (2021-01-01)

Subthreshold Swing in Silicon Gate-All-Around Nanowire and Fully Depleted SOI MOSFETs at Cryogenic Temperature
by: Shohei Sekiguchi, et al.
Published: (2021-01-01)

Comparative Characterization of NWFET and FinFET Transistor Structures Using TCAD Modeling
by: Konstantin O. Petrosyants, et al.
Published: (2022-08-01)

Investigation of GaAs-based nanowire heterostructures using tomography based on STEM-HAADF tilt-series [1]
by: Zell Richard, et al.
Published: (2024-01-01)

Design and analysis of multichannel 10 nm nanosheet FinFET varying space region materials and doping concentrations
by: Hima Bindu Valiveti, et al.
Published: (2024-12-01)

ZnO/graphene ambipolar transistor with low sub-threshold swing
by: Byeong-Hyeok Kim, et al.
Published: (2021-01-01)

Surface tension of Au-catalysed GaAs-nanowires
by: Andersen Christopher Røhl Yskes, et al.
Published: (2024-01-01)

Wurtzite nanowires strain control by DC electrical stimulation
by: Giuseppe Prestopino, et al.
Published: (2023-05-01)

Evolution of Wurtzite Structured GaAs Shells Around InAs Nanowire Cores
by: Kim Y, et al.
Published: (2009-01-01)

Peculiarities of the SCLC Effect in Gate‐All‐Around Silicon Nanowire Field‐Effect Transistor Biosensors
by: Yongqiang Zhang, et al.
Published: (2024-07-01)

A Simulation Study of a Gate-All-Around Nanowire Transistor with a Core–Insulator
by: Yannan Zhang, et al.
Published: (2020-02-01)

Comparison of Temperature Dependent Carrier Transport in FinFET and Gate-All-Around Nanowire FET
by: Soohyun Kim, et al.
Published: (2020-04-01)

Design impact on three gate Dynamic Flash Memory (3G_DFM) for long hole retention time and robust disturbance shield
by: Koji Sakui, et al.
Published: (2023-07-01)

Performance evaluation of SRAM design using different field effect transistors
by: C. Venkataiah, et al.
Published: (2023-01-01)

MOCVD Growth of High-Quality and Density-Tunable GaAs Nanowires on ITO Catalyzed by Au Nanoparticles Deposited by Centrifugation
by: Wu, Dan, et al.
Published: (2015)

A Low-Threshold Miniaturized Plasmonic Nanowire Laser with High-Reflectivity Metal Mirrors
by: Jiahui Zheng, et al.
Published: (2020-09-01)

Photovoltaic Performance of Pin Junction Nanocone Array Solar Cells with Enhanced Effective Optical Absorption
by: Jinnan Zhang, et al.
Published: (2018-10-01)

Optimization of Ohmic Contacts to p-GaAs Nanowires
by: Marcelo Rizzo Piton, et al.
Published: (2019-11-01)

Comparative Study of Novel u-Shaped SOI FinFET Against Multiple-Fin Bulk/SOI FinFET
by: Myoungsu Son, et al.
Published: (2023-01-01)

Analytical subthreshold swing model of junctionless elliptic gate-all-around (GAA) FET
by: Hakkee Jung
Published: (2024-04-01)

Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors
by: Junjie Li, et al.
Published: (2020-04-01)

Characteristics of Gate-All-Around Junctionless Polysilicon Nanowire Transistors With Twin 20-nm Gates
by: Tung-Yu Liu, et al.
Published: (2015-01-01)

Electrochemical nanostructuring of (111) oriented GaAs crystals: from porous structures to nanowires
by: Elena I. Monaico, et al.
Published: (2020-06-01)

Source/Drain Trimming Process to Improve Gate-All-Around Nanosheet Transistors Switching Performance and Enable More Stacks of Nanosheets
by: Kun Chen, et al.
Published: (2022-07-01)

Growth of Inclined GaAs Nanowires by Molecular Beam Epitaxy: Theory and Experiment
by: Tchernycheva M, et al.
Published: (2010-01-01)

3D Simple Monte Carlo Statistical Model for GaAs Nanowire Single Photon Avalanche Diode
by: Shiyu Xie, et al.
Published: (2020-01-01)

Substrate and Mg doping effects in GaAs nanowires
by: Perumal Kannappan, et al.
Published: (2017-10-01)