Highly Stable Nonhydroxyl Antisolvent Polymer Dielectric: A New Strategy towards High-Performance Low-Temperature Solution-Processed Ultraflexible Organic Transistors for Skin-Inspired Electronics
Scarcity of the antisolvent polymer dielectrics and their poor stability have significantly prevented solution-processed ultraflexible organic transistors from low-temperature, large-scale production for applications in low-cost skin-inspired electronics. Here, we present a novel low-temperature sol...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
American Association for the Advancement of Science (AAAS)
2021-01-01
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| Series: | Research |
| Online Access: | http://dx.doi.org/10.34133/2021/9897353 |
| _version_ | 1797280554825023488 |
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| author | Mingxin Zhang Cong Zhang Yahan Yang Hang Ren Junmo Zhang Xiaoli Zhao Yanhong Tong Qingxin Tang Yichun Liu |
| author_facet | Mingxin Zhang Cong Zhang Yahan Yang Hang Ren Junmo Zhang Xiaoli Zhao Yanhong Tong Qingxin Tang Yichun Liu |
| author_sort | Mingxin Zhang |
| collection | DOAJ |
| description | Scarcity of the antisolvent polymer dielectrics and their poor stability have significantly prevented solution-processed ultraflexible organic transistors from low-temperature, large-scale production for applications in low-cost skin-inspired electronics. Here, we present a novel low-temperature solution-processed PEI-EP polymer dielectric with dramatically enhanced thermal stability, humidity stability, and frequency stability compared with the conventional PVA/c-PVA and c-PVP dielectrics, by incorporating polyethyleneimine PEI as crosslinking sites in nonhydroxyl epoxy EP. The PEI-EP dielectric requires a very low process temperature as low as 70°C and simultaneously possesses the high initial decomposition temperature (340°C) and glass transition temperature (230°C), humidity-resistant dielectric properties, and frequency-independent capacitance. Integrated into the solution-processed C8-BTBT thin-film transistors, the PEI-EP dielectric enables the device stable operation in air within 2 months and in high-humidity environment from 20 to 100% without significant performance degradation. The PEI-EP dielectric transistor array also presents weak hysteresis transfer characteristics, excellent electrical performance with 100% operation rate, high mobility up to 7.98 cm2 V-1 s-1 (1 Hz) and average mobility as high as 5.3 cm2 V-1 s-1 (1 Hz), excellent flexibility with the normal operation at the bending radius down to 0.003 mm, and foldable and crumpling-resistant capability. These results reveal the great potential of PEI-EP polymer as dielectric of low-temperature solution-processed ultraflexible organic transistors and open a new strategy for the development and applications of next-generation low-cost skin electronics. |
| first_indexed | 2024-03-07T16:41:55Z |
| format | Article |
| id | doaj.art-001ebf0327b84854888e2374ad573922 |
| institution | Directory Open Access Journal |
| issn | 2639-5274 |
| language | English |
| last_indexed | 2024-03-07T16:41:55Z |
| publishDate | 2021-01-01 |
| publisher | American Association for the Advancement of Science (AAAS) |
| record_format | Article |
| series | Research |
| spelling | doaj.art-001ebf0327b84854888e2374ad5739222024-03-03T07:28:32ZengAmerican Association for the Advancement of Science (AAAS)Research2639-52742021-01-01202110.34133/2021/9897353Highly Stable Nonhydroxyl Antisolvent Polymer Dielectric: A New Strategy towards High-Performance Low-Temperature Solution-Processed Ultraflexible Organic Transistors for Skin-Inspired ElectronicsMingxin Zhang0Cong Zhang1Yahan Yang2Hang Ren3Junmo Zhang4Xiaoli Zhao5Yanhong Tong6Qingxin Tang7Yichun Liu8Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun 130024, ChinaCentre for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun 130024, ChinaCentre for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun 130024, ChinaCentre for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun 130024, ChinaCentre for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun 130024, ChinaCentre for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun 130024, ChinaCentre for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun 130024, ChinaCentre for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun 130024, ChinaCentre for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun 130024, ChinaScarcity of the antisolvent polymer dielectrics and their poor stability have significantly prevented solution-processed ultraflexible organic transistors from low-temperature, large-scale production for applications in low-cost skin-inspired electronics. Here, we present a novel low-temperature solution-processed PEI-EP polymer dielectric with dramatically enhanced thermal stability, humidity stability, and frequency stability compared with the conventional PVA/c-PVA and c-PVP dielectrics, by incorporating polyethyleneimine PEI as crosslinking sites in nonhydroxyl epoxy EP. The PEI-EP dielectric requires a very low process temperature as low as 70°C and simultaneously possesses the high initial decomposition temperature (340°C) and glass transition temperature (230°C), humidity-resistant dielectric properties, and frequency-independent capacitance. Integrated into the solution-processed C8-BTBT thin-film transistors, the PEI-EP dielectric enables the device stable operation in air within 2 months and in high-humidity environment from 20 to 100% without significant performance degradation. The PEI-EP dielectric transistor array also presents weak hysteresis transfer characteristics, excellent electrical performance with 100% operation rate, high mobility up to 7.98 cm2 V-1 s-1 (1 Hz) and average mobility as high as 5.3 cm2 V-1 s-1 (1 Hz), excellent flexibility with the normal operation at the bending radius down to 0.003 mm, and foldable and crumpling-resistant capability. These results reveal the great potential of PEI-EP polymer as dielectric of low-temperature solution-processed ultraflexible organic transistors and open a new strategy for the development and applications of next-generation low-cost skin electronics.http://dx.doi.org/10.34133/2021/9897353 |
| spellingShingle | Mingxin Zhang Cong Zhang Yahan Yang Hang Ren Junmo Zhang Xiaoli Zhao Yanhong Tong Qingxin Tang Yichun Liu Highly Stable Nonhydroxyl Antisolvent Polymer Dielectric: A New Strategy towards High-Performance Low-Temperature Solution-Processed Ultraflexible Organic Transistors for Skin-Inspired Electronics Research |
| title | Highly Stable Nonhydroxyl Antisolvent Polymer Dielectric: A New Strategy towards High-Performance Low-Temperature Solution-Processed Ultraflexible Organic Transistors for Skin-Inspired Electronics |
| title_full | Highly Stable Nonhydroxyl Antisolvent Polymer Dielectric: A New Strategy towards High-Performance Low-Temperature Solution-Processed Ultraflexible Organic Transistors for Skin-Inspired Electronics |
| title_fullStr | Highly Stable Nonhydroxyl Antisolvent Polymer Dielectric: A New Strategy towards High-Performance Low-Temperature Solution-Processed Ultraflexible Organic Transistors for Skin-Inspired Electronics |
| title_full_unstemmed | Highly Stable Nonhydroxyl Antisolvent Polymer Dielectric: A New Strategy towards High-Performance Low-Temperature Solution-Processed Ultraflexible Organic Transistors for Skin-Inspired Electronics |
| title_short | Highly Stable Nonhydroxyl Antisolvent Polymer Dielectric: A New Strategy towards High-Performance Low-Temperature Solution-Processed Ultraflexible Organic Transistors for Skin-Inspired Electronics |
| title_sort | highly stable nonhydroxyl antisolvent polymer dielectric a new strategy towards high performance low temperature solution processed ultraflexible organic transistors for skin inspired electronics |
| url | http://dx.doi.org/10.34133/2021/9897353 |
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