Single-layer GaInO3: Promising material for optoelectronic and out-of-plane piezoelectric devices
Two-dimensional (2D) semiconductors with intrinsic dipole show glorious prospects in the fields of nanoelectronics. Herein, the possible applications of single-layer GaInO3 in the realms of optoelectronics and piezoelectricity are investigated via the first-principles study. We find that single-laye...
| Main Authors: | , , , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Elsevier
2023-09-01
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| Series: | Results in Physics |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S221137972300640X |
| _version_ | 1827815797438808064 |
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| author | Lei Hu Yi-Feng Sun Jie Cheng Xi Qin Xin-Yi Yang Song Wu Ru-Fei Tang Zhi Long Ming-Xia Tang Zheng-Quan Hu Xing Zou An-Rong Wang Shi-Fa Wang Yong Wei Li-Li Liu Xiao-Zhi Wu |
| author_facet | Lei Hu Yi-Feng Sun Jie Cheng Xi Qin Xin-Yi Yang Song Wu Ru-Fei Tang Zhi Long Ming-Xia Tang Zheng-Quan Hu Xing Zou An-Rong Wang Shi-Fa Wang Yong Wei Li-Li Liu Xiao-Zhi Wu |
| author_sort | Lei Hu |
| collection | DOAJ |
| description | Two-dimensional (2D) semiconductors with intrinsic dipole show glorious prospects in the fields of nanoelectronics. Herein, the possible applications of single-layer GaInO3 in the realms of optoelectronics and piezoelectricity are investigated via the first-principles study. We find that single-layer GaInO3 exhibits a large vertical dipole moment and a direct bandgap (1.53 eV). Its transport mobility for electrons and holes both surpasses 2000 cm2·V−1·s−1. The effective separation of charge carriers for single-layer GaInO3 is confirmed by the strong inside electric field and the spatially isolated conduction band minimum (CBM) and valence band maximum (VBM). The allowed optical transition makes single-layer GaInO3 a hopeful candidate for optical absorbers and detectors. Finally, we also find that single-layer GaInO3 holds a prominently stronger out-of-plane piezoelectric effect than that of previous 2D materials and will play a big role in modern top-bottom gate technologies. In summary, this work proves that single-layer GaInO3 is a promising candidate for atomic-thick optoelectronic and piezoelectric devices. |
| first_indexed | 2024-03-12T00:05:48Z |
| format | Article |
| id | doaj.art-0059652a40d34e6e900657bb71a90c4b |
| institution | Directory Open Access Journal |
| issn | 2211-3797 |
| language | English |
| last_indexed | 2024-03-12T00:05:48Z |
| publishDate | 2023-09-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Results in Physics |
| spelling | doaj.art-0059652a40d34e6e900657bb71a90c4b2023-09-17T04:56:28ZengElsevierResults in Physics2211-37972023-09-0152106847Single-layer GaInO3: Promising material for optoelectronic and out-of-plane piezoelectric devicesLei Hu0Yi-Feng Sun1Jie Cheng2Xi Qin3Xin-Yi Yang4Song Wu5Ru-Fei Tang6Zhi Long7Ming-Xia Tang8Zheng-Quan Hu9Xing Zou10An-Rong Wang11Shi-Fa Wang12Yong Wei13Li-Li Liu14Xiao-Zhi Wu15College of Electronic and Information Engineer, Chongqing Three Gorges University, Chongqing 404100, China; Corresponding author.College of Electronic and Information Engineer, Chongqing Three Gorges University, Chongqing 404100, ChinaCollege of Electronic and Information Engineer, Chongqing Three Gorges University, Chongqing 404100, ChinaCollege of Electronic and Information Engineer, Chongqing Three Gorges University, Chongqing 404100, ChinaCollege of Electronic and Information Engineer, Chongqing Three Gorges University, Chongqing 404100, ChinaCollege of Electronic and Information Engineer, Chongqing Three Gorges University, Chongqing 404100, ChinaCollege of Teacher Education, Chongqing Three Gorges University, Chongqing 404100, ChinaCollege of Electronic and Information Engineer, Chongqing Three Gorges University, Chongqing 404100, ChinaCollege of Teacher Education, Chongqing Three Gorges University, Chongqing 404100, ChinaCollege of Electronic and Information Engineer, Chongqing Three Gorges University, Chongqing 404100, ChinaCollege of Electronic and Information Engineer, Chongqing Three Gorges University, Chongqing 404100, ChinaCollege of Electronic and Information Engineer, Chongqing Three Gorges University, Chongqing 404100, ChinaCollege of Electronic and Information Engineer, Chongqing Three Gorges University, Chongqing 404100, ChinaCollege of Electronic and Information Engineer, Chongqing Three Gorges University, Chongqing 404100, ChinaCollege of Teacher Education, Chongqing Three Gorges University, Chongqing 404100, ChinaInstitute for Structure and Function, Chongqing University, Chongqing 401331, ChinaTwo-dimensional (2D) semiconductors with intrinsic dipole show glorious prospects in the fields of nanoelectronics. Herein, the possible applications of single-layer GaInO3 in the realms of optoelectronics and piezoelectricity are investigated via the first-principles study. We find that single-layer GaInO3 exhibits a large vertical dipole moment and a direct bandgap (1.53 eV). Its transport mobility for electrons and holes both surpasses 2000 cm2·V−1·s−1. The effective separation of charge carriers for single-layer GaInO3 is confirmed by the strong inside electric field and the spatially isolated conduction band minimum (CBM) and valence band maximum (VBM). The allowed optical transition makes single-layer GaInO3 a hopeful candidate for optical absorbers and detectors. Finally, we also find that single-layer GaInO3 holds a prominently stronger out-of-plane piezoelectric effect than that of previous 2D materials and will play a big role in modern top-bottom gate technologies. In summary, this work proves that single-layer GaInO3 is a promising candidate for atomic-thick optoelectronic and piezoelectric devices.http://www.sciencedirect.com/science/article/pii/S221137972300640X2D materialSingle-layer GaInO3Transport propertyPiezoelectricityFirst-principles |
| spellingShingle | Lei Hu Yi-Feng Sun Jie Cheng Xi Qin Xin-Yi Yang Song Wu Ru-Fei Tang Zhi Long Ming-Xia Tang Zheng-Quan Hu Xing Zou An-Rong Wang Shi-Fa Wang Yong Wei Li-Li Liu Xiao-Zhi Wu Single-layer GaInO3: Promising material for optoelectronic and out-of-plane piezoelectric devices Results in Physics 2D material Single-layer GaInO3 Transport property Piezoelectricity First-principles |
| title | Single-layer GaInO3: Promising material for optoelectronic and out-of-plane piezoelectric devices |
| title_full | Single-layer GaInO3: Promising material for optoelectronic and out-of-plane piezoelectric devices |
| title_fullStr | Single-layer GaInO3: Promising material for optoelectronic and out-of-plane piezoelectric devices |
| title_full_unstemmed | Single-layer GaInO3: Promising material for optoelectronic and out-of-plane piezoelectric devices |
| title_short | Single-layer GaInO3: Promising material for optoelectronic and out-of-plane piezoelectric devices |
| title_sort | single layer gaino3 promising material for optoelectronic and out of plane piezoelectric devices |
| topic | 2D material Single-layer GaInO3 Transport property Piezoelectricity First-principles |
| url | http://www.sciencedirect.com/science/article/pii/S221137972300640X |
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