GaN JBS Diode Device Performance Prediction Method Based on Neural Network

GaN JBS Diode Device Performance Prediction Method Based on Neural Network

GaN JBS diodes exhibit excellent performance in power electronics. However, device performance is affected by multiple parameters of the P+ region, and the traditional TCAD simulation method is complex and time-consuming. In this study, we used a neural network machine learning method to predict the...

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Bibliographic Details
Main Authors: Hao Ma, Xiaoling Duan, Shulong Wang, Shijie Liu, Jincheng Zhang, Yue Hao
Format: Article
Language:English
Published: MDPI AG 2023-01-01
Series:Micromachines
Subjects:
GaN JBS diode
TCAD simulation
neural network
performance prediction
Online Access:https://www.mdpi.com/2072-666X/14/1/188

Internet

https://www.mdpi.com/2072-666X/14/1/188

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