Gallium Nitride Based Electrode for High‐Temperature Supercapacitors
Abstract Gallium nitride (GaN) single crystal, as the representative of wide‐band semiconductors, has great prospects for high‐temperature energy storage, of its splendid power output, robust temperature stability, and superior carrier mobility. Nonetheless, it is an essential challenge for GaN‐base...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2023-05-01
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| Series: | Advanced Science |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/advs.202300780 |
| _version_ | 1797819650370699264 |
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| author | Songyang Lv Shouzhi Wang Lili Li Shoutian Xie Jiaoxian Yu Yueyao Zhong Guodong Wang Chang Liang Xiangang Xu Lei Zhang |
| author_facet | Songyang Lv Shouzhi Wang Lili Li Shoutian Xie Jiaoxian Yu Yueyao Zhong Guodong Wang Chang Liang Xiangang Xu Lei Zhang |
| author_sort | Songyang Lv |
| collection | DOAJ |
| description | Abstract Gallium nitride (GaN) single crystal, as the representative of wide‐band semiconductors, has great prospects for high‐temperature energy storage, of its splendid power output, robust temperature stability, and superior carrier mobility. Nonetheless, it is an essential challenge for GaN‐based devices to improve energy storage. Herein, an innovative strategy is proposed by constructing GaN/Nickel cobalt oxygen (NiCoO2 ）heterostructure for enhanced supercapacitors (SCs). Benefiting from the synergy effect between the porous GaN network as a highly conductive skeleton and the NiCoO2 with massive active sites. The GaN/NiCoO2 heterostructure‐based SCs with ion liquids electrolyte are assembled and delivered an impressive energy density of 15.2 µWh cm−2 and power density, as well as superior service life at 130 °C. The theoretical calculation further explains that the reason for the energy storage enhancement of the GaN/NiCoO2 is due to the presence of the built‐in electric fields. This work offers a novel perspective for meeting the practical application of GaN‐based energy storage devices with exceptional performance capable of operation under high‐temperature environments. |
| first_indexed | 2024-03-13T09:26:46Z |
| format | Article |
| id | doaj.art-0071c168737a435485d093ba1f60ece7 |
| institution | Directory Open Access Journal |
| issn | 2198-3844 |
| language | English |
| last_indexed | 2024-03-13T09:26:46Z |
| publishDate | 2023-05-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advanced Science |
| spelling | doaj.art-0071c168737a435485d093ba1f60ece72023-05-26T09:24:00ZengWileyAdvanced Science2198-38442023-05-011015n/an/a10.1002/advs.202300780Gallium Nitride Based Electrode for High‐Temperature SupercapacitorsSongyang Lv0Shouzhi Wang1Lili Li2Shoutian Xie3Jiaoxian Yu4Yueyao Zhong5Guodong Wang6Chang Liang7Xiangang Xu8Lei Zhang9Institute of Novel Semiconductors State Key Lab of Crystal Materials Shandong University Jinan 250100 P. R. ChinaInstitute of Novel Semiconductors State Key Lab of Crystal Materials Shandong University Jinan 250100 P. R. ChinaInstitute of Crystal Materials State Key Lab of Crystal Materials Shandong University Jinan 250100 P. R. ChinaSchool of Public Administration Shandong Normal University Jinan 250100 P. R. ChinaKey Laboratory of Processing and Testing Technology of Glass & Functional Ceramics of Shandong Province School of Materials Science and Engineering Qilu University of Technology (Shandong Academy of Sciences) Jinan 250353 P. R. ChinaSchool of Materials Science and Engineering Shandong Jianzhu University Jinan 250100 P. R. ChinaInstitute of Novel Semiconductors State Key Lab of Crystal Materials Shandong University Jinan 250100 P. R. ChinaInstitute of Novel Semiconductors State Key Lab of Crystal Materials Shandong University Jinan 250100 P. R. ChinaInstitute of Novel Semiconductors State Key Lab of Crystal Materials Shandong University Jinan 250100 P. R. ChinaInstitute of Novel Semiconductors State Key Lab of Crystal Materials Shandong University Jinan 250100 P. R. ChinaAbstract Gallium nitride (GaN) single crystal, as the representative of wide‐band semiconductors, has great prospects for high‐temperature energy storage, of its splendid power output, robust temperature stability, and superior carrier mobility. Nonetheless, it is an essential challenge for GaN‐based devices to improve energy storage. Herein, an innovative strategy is proposed by constructing GaN/Nickel cobalt oxygen (NiCoO2 ）heterostructure for enhanced supercapacitors (SCs). Benefiting from the synergy effect between the porous GaN network as a highly conductive skeleton and the NiCoO2 with massive active sites. The GaN/NiCoO2 heterostructure‐based SCs with ion liquids electrolyte are assembled and delivered an impressive energy density of 15.2 µWh cm−2 and power density, as well as superior service life at 130 °C. The theoretical calculation further explains that the reason for the energy storage enhancement of the GaN/NiCoO2 is due to the presence of the built‐in electric fields. This work offers a novel perspective for meeting the practical application of GaN‐based energy storage devices with exceptional performance capable of operation under high‐temperature environments.https://doi.org/10.1002/advs.202300780density functional theoryheterostructureshigh temperaturesporous GaNsupercapacitors |
| spellingShingle | Songyang Lv Shouzhi Wang Lili Li Shoutian Xie Jiaoxian Yu Yueyao Zhong Guodong Wang Chang Liang Xiangang Xu Lei Zhang Gallium Nitride Based Electrode for High‐Temperature Supercapacitors Advanced Science density functional theory heterostructures high temperatures porous GaN supercapacitors |
| title | Gallium Nitride Based Electrode for High‐Temperature Supercapacitors |
| title_full | Gallium Nitride Based Electrode for High‐Temperature Supercapacitors |
| title_fullStr | Gallium Nitride Based Electrode for High‐Temperature Supercapacitors |
| title_full_unstemmed | Gallium Nitride Based Electrode for High‐Temperature Supercapacitors |
| title_short | Gallium Nitride Based Electrode for High‐Temperature Supercapacitors |
| title_sort | gallium nitride based electrode for high temperature supercapacitors |
| topic | density functional theory heterostructures high temperatures porous GaN supercapacitors |
| url | https://doi.org/10.1002/advs.202300780 |
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