Gallium Nitride Based Electrode for High‐Temperature Supercapacitors

Gallium Nitride Based Electrode for High‐Temperature Supercapacitors

Abstract Gallium nitride (GaN) single crystal, as the representative of wide‐band semiconductors, has great prospects for high‐temperature energy storage, of its splendid power output, robust temperature stability, and superior carrier mobility. Nonetheless, it is an essential challenge for GaN‐base...

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Bibliographic Details
Main Authors: Songyang Lv, Shouzhi Wang, Lili Li, Shoutian Xie, Jiaoxian Yu, Yueyao Zhong, Guodong Wang, Chang Liang, Xiangang Xu, Lei Zhang
Format: Article
Language:English
Published: Wiley 2023-05-01
Series:Advanced Science
Subjects:
density functional theory
heterostructures
high temperatures
porous GaN
supercapacitors
Online Access:https://doi.org/10.1002/advs.202300780

Internet

https://doi.org/10.1002/advs.202300780

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