Research on the rapid growth and structure of ultra-nanocrystalline diamond thin films
Ultra-nanocrystalline diamond (UNCD) films were prepared by microwave plasma chemical vapour deposition (MPCVD) at different temperature conditions by adjusting the microwave power. The effects of the activation power of the reaction source and effects of the temperature of the substrate on the grow...
| Main Authors: | , , |
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| Format: | Article |
| Language: | zho |
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Zhengzhou Research Institute for Abrasives & Grinding Co., Ltd.
2023-04-01
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| Series: | Jin'gangshi yu moliao moju gongcheng |
| Subjects: | |
| Online Access: | http://www.jgszz.cn/article/doi/10.13394/j.cnki.jgszz.2022.0122 |
| _version_ | 1827769571610722304 |
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| author | Shaobo WEI Bing WANG Ying XIONG |
| author_facet | Shaobo WEI Bing WANG Ying XIONG |
| author_sort | Shaobo WEI |
| collection | DOAJ |
| description | Ultra-nanocrystalline diamond (UNCD) films were prepared by microwave plasma chemical vapour deposition (MPCVD) at different temperature conditions by adjusting the microwave power. The effects of the activation power of the reaction source and effects of the temperature of the substrate on the growth and composition of the UNCD films were compared and analysed in order to obtain the technique to rapidly grow high-quality UNCD films. SEM, XRD and Raman methods were used to characterise the morphological structure, phase composition and growth rate of the UNCD films, while OES spectroscopy was used to monitor the state of the growth groups during the deposition of the UNCD films. The results showed that the deposition temperature of the UNCD films ranged from 450 to 650 ℃; that the peak intensity of CN and C2 groups in the OES spectra increased with the increase of power and substrate temperature; that the growth rate increased from 0.82 μm/h to 6.62 μm/h; and that the grain size in the films increased. The average grain size was less than 10.00 nm, and the surface was flatter and smoother, forming a surface profile more favourable to the mechanical properties. Therefore, the use of diisopropylamine liquid small molecules as the reaction source, together with the application of higher microwave power and deposition at higher substrate temperatures, is an effective way to mushroom high-quality UNCD films. |
| first_indexed | 2024-03-11T12:26:17Z |
| format | Article |
| id | doaj.art-009667e9a86c4803a89b45858f1695ab |
| institution | Directory Open Access Journal |
| issn | 1006-852X |
| language | zho |
| last_indexed | 2024-03-11T12:26:17Z |
| publishDate | 2023-04-01 |
| publisher | Zhengzhou Research Institute for Abrasives & Grinding Co., Ltd. |
| record_format | Article |
| series | Jin'gangshi yu moliao moju gongcheng |
| spelling | doaj.art-009667e9a86c4803a89b45858f1695ab2023-11-06T08:38:25ZzhoZhengzhou Research Institute for Abrasives & Grinding Co., Ltd.Jin'gangshi yu moliao moju gongcheng1006-852X2023-04-0143217618110.13394/j.cnki.jgszz.2022.01222022-0122Research on the rapid growth and structure of ultra-nanocrystalline diamond thin filmsShaobo WEI0Bing WANG1Ying XIONG2School of Materials and Chemistry, Southwest University of Science and Technology, Mianyang 621010, Sichuan, ChinaSchool of Materials and Chemistry, Southwest University of Science and Technology, Mianyang 621010, Sichuan, ChinaSchool of Materials and Chemistry, Southwest University of Science and Technology, Mianyang 621010, Sichuan, ChinaUltra-nanocrystalline diamond (UNCD) films were prepared by microwave plasma chemical vapour deposition (MPCVD) at different temperature conditions by adjusting the microwave power. The effects of the activation power of the reaction source and effects of the temperature of the substrate on the growth and composition of the UNCD films were compared and analysed in order to obtain the technique to rapidly grow high-quality UNCD films. SEM, XRD and Raman methods were used to characterise the morphological structure, phase composition and growth rate of the UNCD films, while OES spectroscopy was used to monitor the state of the growth groups during the deposition of the UNCD films. The results showed that the deposition temperature of the UNCD films ranged from 450 to 650 ℃; that the peak intensity of CN and C2 groups in the OES spectra increased with the increase of power and substrate temperature; that the growth rate increased from 0.82 μm/h to 6.62 μm/h; and that the grain size in the films increased. The average grain size was less than 10.00 nm, and the surface was flatter and smoother, forming a surface profile more favourable to the mechanical properties. Therefore, the use of diisopropylamine liquid small molecules as the reaction source, together with the application of higher microwave power and deposition at higher substrate temperatures, is an effective way to mushroom high-quality UNCD films.http://www.jgszz.cn/article/doi/10.13394/j.cnki.jgszz.2022.0122uncd filmmpcvdsubstrate temperaturegrowth rate；grain size |
| spellingShingle | Shaobo WEI Bing WANG Ying XIONG Research on the rapid growth and structure of ultra-nanocrystalline diamond thin films Jin'gangshi yu moliao moju gongcheng uncd film mpcvd substrate temperature growth rate；grain size |
| title | Research on the rapid growth and structure of ultra-nanocrystalline diamond thin films |
| title_full | Research on the rapid growth and structure of ultra-nanocrystalline diamond thin films |
| title_fullStr | Research on the rapid growth and structure of ultra-nanocrystalline diamond thin films |
| title_full_unstemmed | Research on the rapid growth and structure of ultra-nanocrystalline diamond thin films |
| title_short | Research on the rapid growth and structure of ultra-nanocrystalline diamond thin films |
| title_sort | research on the rapid growth and structure of ultra nanocrystalline diamond thin films |
| topic | uncd film mpcvd substrate temperature growth rate；grain size |
| url | http://www.jgszz.cn/article/doi/10.13394/j.cnki.jgszz.2022.0122 |
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