Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey
Resistive switching effect in transition metal oxide (TMO) based material is often associated with the valence change mechanism (VCM). Typical modeling of valence change resistive switching memory consists of three closely related phenomena, i.e., conductive filament (CF) geometry evolution, conduct...
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| Format: | Article |
| Language: | English |
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MDPI AG
2015-09-01
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| Series: | Electronics |
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| Online Access: | http://www.mdpi.com/2079-9292/4/3/586 |
| _version_ | 1798041965544079360 |
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| author | Ee Wah Lim Razali Ismail |
| author_facet | Ee Wah Lim Razali Ismail |
| author_sort | Ee Wah Lim |
| collection | DOAJ |
| description | Resistive switching effect in transition metal oxide (TMO) based material is often associated with the valence change mechanism (VCM). Typical modeling of valence change resistive switching memory consists of three closely related phenomena, i.e., conductive filament (CF) geometry evolution, conduction mechanism and temperature dynamic evolution. It is widely agreed that the electrochemical reduction-oxidation (redox) process and oxygen vacancies migration plays an essential role in the CF forming and rupture process. However, the conduction mechanism of resistive switching memory varies considerably depending on the material used in the dielectric layer and selection of electrodes. Among the popular observations are the Poole-Frenkel emission, Schottky emission, space-charge-limited conduction (SCLC), trap-assisted tunneling (TAT) and hopping conduction. In this article, we will conduct a survey on several published valence change resistive switching memories with a particular interest in the I-V characteristic and the corresponding conduction mechanism. |
| first_indexed | 2024-04-11T22:28:55Z |
| format | Article |
| id | doaj.art-00fcb81e94074e85988dc60d189efca8 |
| institution | Directory Open Access Journal |
| issn | 2079-9292 |
| language | English |
| last_indexed | 2024-04-11T22:28:55Z |
| publishDate | 2015-09-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Electronics |
| spelling | doaj.art-00fcb81e94074e85988dc60d189efca82022-12-22T03:59:33ZengMDPI AGElectronics2079-92922015-09-014358661310.3390/electronics4030586electronics4030586Conduction Mechanism of Valence Change Resistive Switching Memory: A SurveyEe Wah Lim0Razali Ismail1Faculty of Electrical Engineering, Universiti Teknologi Malaysia, Skudai, Johor 81310, MalaysiaFaculty of Electrical Engineering, Universiti Teknologi Malaysia, Skudai, Johor 81310, MalaysiaResistive switching effect in transition metal oxide (TMO) based material is often associated with the valence change mechanism (VCM). Typical modeling of valence change resistive switching memory consists of three closely related phenomena, i.e., conductive filament (CF) geometry evolution, conduction mechanism and temperature dynamic evolution. It is widely agreed that the electrochemical reduction-oxidation (redox) process and oxygen vacancies migration plays an essential role in the CF forming and rupture process. However, the conduction mechanism of resistive switching memory varies considerably depending on the material used in the dielectric layer and selection of electrodes. Among the popular observations are the Poole-Frenkel emission, Schottky emission, space-charge-limited conduction (SCLC), trap-assisted tunneling (TAT) and hopping conduction. In this article, we will conduct a survey on several published valence change resistive switching memories with a particular interest in the I-V characteristic and the corresponding conduction mechanism.http://www.mdpi.com/2079-9292/4/3/586resistive switchingnonvolatile memorymemristorconduction mechanismRRAM |
| spellingShingle | Ee Wah Lim Razali Ismail Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey Electronics resistive switching nonvolatile memory memristor conduction mechanism RRAM |
| title | Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey |
| title_full | Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey |
| title_fullStr | Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey |
| title_full_unstemmed | Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey |
| title_short | Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey |
| title_sort | conduction mechanism of valence change resistive switching memory a survey |
| topic | resistive switching nonvolatile memory memristor conduction mechanism RRAM |
| url | http://www.mdpi.com/2079-9292/4/3/586 |
| work_keys_str_mv | AT eewahlim conductionmechanismofvalencechangeresistiveswitchingmemoryasurvey AT razaliismail conductionmechanismofvalencechangeresistiveswitchingmemoryasurvey |