Growth of Zn3Ta2O8 crystal scintillator by a novel melt growth technique named shielded arc melting method

In this study, it was demonstrated that Zn3Ta2O8 crystals containing zinc oxide with high vapor pressure can grow in melt by the shielded arc melting method. The radiation response characteristics of the crystals were evaluated. The grown crystals showed an emission peak at 410 nm, ascribed to self-...

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Main Authors: Ryuga Yajima, Kei Kamada, Yui Takizawa, Masao Yoshino, Rikito Murakami, Kyoung Jin Kim, Takahiko Horiai, Akihiro Yamaji, Shunsuke Kurosawa, Yuui Yokota, Hiroki Sato, Satoshi Toyoda, Yuji Ohashi, Takashi Hanada, Akira Yoshikawa
Format: Article
Language:English
Published: Elsevier 2022-05-01
Series:Optical Materials: X
Subjects:
Online Access:http://www.sciencedirect.com/science/article/pii/S2590147822000158
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author Ryuga Yajima
Kei Kamada
Yui Takizawa
Masao Yoshino
Rikito Murakami
Kyoung Jin Kim
Takahiko Horiai
Akihiro Yamaji
Shunsuke Kurosawa
Yuui Yokota
Hiroki Sato
Satoshi Toyoda
Yuji Ohashi
Takashi Hanada
Akira Yoshikawa
author_facet Ryuga Yajima
Kei Kamada
Yui Takizawa
Masao Yoshino
Rikito Murakami
Kyoung Jin Kim
Takahiko Horiai
Akihiro Yamaji
Shunsuke Kurosawa
Yuui Yokota
Hiroki Sato
Satoshi Toyoda
Yuji Ohashi
Takashi Hanada
Akira Yoshikawa
author_sort Ryuga Yajima
collection DOAJ
description In this study, it was demonstrated that Zn3Ta2O8 crystals containing zinc oxide with high vapor pressure can grow in melt by the shielded arc melting method. The radiation response characteristics of the crystals were evaluated. The grown crystals showed an emission peak at 410 nm, ascribed to self-trapped excitation, Ta4+–O2−. The full width at half maximum of the X-ray rocking curve was 655 arcsec. The light output under 662 keV gamma-ray irradiation of Zn3Ta2O8 was approximately 4,700 photons/MeV. The decay time was 17.3 μs? Thus, the shielded arc melting method was shown to be a quick and economic growth technique for the survey of new scintillator materials containing high-vapor-pressure starting components.
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spelling doaj.art-0113147c41c24d0886a6841659a0744d2022-12-22T02:37:20ZengElsevierOptical Materials: X2590-14782022-05-0114100149Growth of Zn3Ta2O8 crystal scintillator by a novel melt growth technique named shielded arc melting methodRyuga Yajima0Kei Kamada1Yui Takizawa2Masao Yoshino3Rikito Murakami4Kyoung Jin Kim5Takahiko Horiai6Akihiro Yamaji7Shunsuke Kurosawa8Yuui Yokota9Hiroki Sato10Satoshi Toyoda11Yuji Ohashi12Takashi Hanada13Akira Yoshikawa14Graduate School of Engineering, Tohoku University, 6-6 Aramaki Aza Aoba, Aoba-ku, Sendai, Miyagi, 980-8579, Japan; Institute for Material Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi, 980-8577, JapanNew Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aramaki Aoba, Aoba-ku, Sendai, Miyagi, 980-8579, Japan; C&A Corporation, 1-16-23, Itiban-tyo, Aoba-ku, Sendai, Miyagi, 980-0811, Japan; Corresponding author. Institute for Material Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi, 980-8579, Japan.Graduate School of Engineering, Tohoku University, 6-6 Aramaki Aza Aoba, Aoba-ku, Sendai, Miyagi, 980-8579, Japan; Institute for Material Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi, 980-8577, JapanInstitute for Material Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi, 980-8577, JapanGraduate School of Engineering, Tohoku University, 6-6 Aramaki Aza Aoba, Aoba-ku, Sendai, Miyagi, 980-8579, Japan; C&A Corporation, 1-16-23, Itiban-tyo, Aoba-ku, Sendai, Miyagi, 980-0811, JapanNew Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aramaki Aoba, Aoba-ku, Sendai, Miyagi, 980-8579, JapanInstitute for Material Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi, 980-8577, JapanNew Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aramaki Aoba, Aoba-ku, Sendai, Miyagi, 980-8579, JapanInstitute for Material Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi, 980-8577, Japan; New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aramaki Aoba, Aoba-ku, Sendai, Miyagi, 980-8579, JapanInstitute for Material Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi, 980-8577, JapanNew Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aramaki Aoba, Aoba-ku, Sendai, Miyagi, 980-8579, JapanNew Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aramaki Aoba, Aoba-ku, Sendai, Miyagi, 980-8579, JapanNew Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aramaki Aoba, Aoba-ku, Sendai, Miyagi, 980-8579, JapanInstitute for Material Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi, 980-8577, JapanInstitute for Material Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi, 980-8577, Japan; New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aramaki Aoba, Aoba-ku, Sendai, Miyagi, 980-8579, Japan; C&A Corporation, 1-16-23, Itiban-tyo, Aoba-ku, Sendai, Miyagi, 980-0811, JapanIn this study, it was demonstrated that Zn3Ta2O8 crystals containing zinc oxide with high vapor pressure can grow in melt by the shielded arc melting method. The radiation response characteristics of the crystals were evaluated. The grown crystals showed an emission peak at 410 nm, ascribed to self-trapped excitation, Ta4+–O2−. The full width at half maximum of the X-ray rocking curve was 655 arcsec. The light output under 662 keV gamma-ray irradiation of Zn3Ta2O8 was approximately 4,700 photons/MeV. The decay time was 17.3 μs? Thus, the shielded arc melting method was shown to be a quick and economic growth technique for the survey of new scintillator materials containing high-vapor-pressure starting components.http://www.sciencedirect.com/science/article/pii/S2590147822000158ScintillatorCrystal growthShielded arc melting method
spellingShingle Ryuga Yajima
Kei Kamada
Yui Takizawa
Masao Yoshino
Rikito Murakami
Kyoung Jin Kim
Takahiko Horiai
Akihiro Yamaji
Shunsuke Kurosawa
Yuui Yokota
Hiroki Sato
Satoshi Toyoda
Yuji Ohashi
Takashi Hanada
Akira Yoshikawa
Growth of Zn3Ta2O8 crystal scintillator by a novel melt growth technique named shielded arc melting method
Optical Materials: X
Scintillator
Crystal growth
Shielded arc melting method
title Growth of Zn3Ta2O8 crystal scintillator by a novel melt growth technique named shielded arc melting method
title_full Growth of Zn3Ta2O8 crystal scintillator by a novel melt growth technique named shielded arc melting method
title_fullStr Growth of Zn3Ta2O8 crystal scintillator by a novel melt growth technique named shielded arc melting method
title_full_unstemmed Growth of Zn3Ta2O8 crystal scintillator by a novel melt growth technique named shielded arc melting method
title_short Growth of Zn3Ta2O8 crystal scintillator by a novel melt growth technique named shielded arc melting method
title_sort growth of zn3ta2o8 crystal scintillator by a novel melt growth technique named shielded arc melting method
topic Scintillator
Crystal growth
Shielded arc melting method
url http://www.sciencedirect.com/science/article/pii/S2590147822000158
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