High On-Off Ratio Graphene Switch via Electrical Double Layer Gating
This paper discusses the production and investigation of novel graphene switches by gating through an electrical double layer (EDL). Controlled voltage biases across a liquid dielectric and graphene induce electrochemical reactions within the dielectric and produce high electric fields in an EDL at...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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IEEE
2020-01-01
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| Series: | IEEE Access |
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| Online Access: | https://ieeexplore.ieee.org/document/9093841/ |
| _version_ | 1819158354592792576 |
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| author | Cody K. Hayashi David G. Garmire Tyler J. Yamauchi Carlos M. Torres Richard C. Ordonez |
| author_facet | Cody K. Hayashi David G. Garmire Tyler J. Yamauchi Carlos M. Torres Richard C. Ordonez |
| author_sort | Cody K. Hayashi |
| collection | DOAJ |
| description | This paper discusses the production and investigation of novel graphene switches by gating through an electrical double layer (EDL). Controlled voltage biases across a liquid dielectric and graphene induce electrochemical reactions within the dielectric and produce high electric fields in an EDL at the surface of graphene. As the electrochemical reactions occur within the dielectric, the EDL strength separates the electrochemically-produced ions based on their polarity, and provides the necessary molecular activation and deactivation energies to form weak, reversible molecular bonds between the produced ions and graphene. The reversible bonds between the ions and graphene are used to dynamically alter the electronic transport through graphene, which introduces an exciting assortment of device possibilities. Whereas traditional graphene devices are unuseful for electronic switches or digital logic due to an insufficient bandgap of graphene, the presented graphene electrochemical field-effect transistors (GEC-FETs) exhibit ON-OFF ratios larger than 10<sup>4</sup> with OFF-resistances as high as 10 MΩ. Channel current, gate voltage, and dielectric medium are varied and compared to show their effect on device performance. The presented device and associated techniques show potential for integration in graphene digital-logic architectures. |
| first_indexed | 2024-12-22T16:23:20Z |
| format | Article |
| id | doaj.art-014d25295a214af4a0b233b5051cea59 |
| institution | Directory Open Access Journal |
| issn | 2169-3536 |
| language | English |
| last_indexed | 2024-12-22T16:23:20Z |
| publishDate | 2020-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Access |
| spelling | doaj.art-014d25295a214af4a0b233b5051cea592022-12-21T18:20:12ZengIEEEIEEE Access2169-35362020-01-018923149232110.1109/ACCESS.2020.29946119093841High On-Off Ratio Graphene Switch via Electrical Double Layer GatingCody K. Hayashi0https://orcid.org/0000-0002-4305-8814David G. Garmire1Tyler J. Yamauchi2Carlos M. Torres3Richard C. Ordonez4Naval Information Warfare Center Pacific, Pearl City, HI, USADepartment of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI, USANaval Information Warfare Center Pacific, Pearl City, HI, USANaval Information Warfare Center Pacific, San Diego, CA, USANaval Information Warfare Center Pacific, Pearl City, HI, USAThis paper discusses the production and investigation of novel graphene switches by gating through an electrical double layer (EDL). Controlled voltage biases across a liquid dielectric and graphene induce electrochemical reactions within the dielectric and produce high electric fields in an EDL at the surface of graphene. As the electrochemical reactions occur within the dielectric, the EDL strength separates the electrochemically-produced ions based on their polarity, and provides the necessary molecular activation and deactivation energies to form weak, reversible molecular bonds between the produced ions and graphene. The reversible bonds between the ions and graphene are used to dynamically alter the electronic transport through graphene, which introduces an exciting assortment of device possibilities. Whereas traditional graphene devices are unuseful for electronic switches or digital logic due to an insufficient bandgap of graphene, the presented graphene electrochemical field-effect transistors (GEC-FETs) exhibit ON-OFF ratios larger than 10<sup>4</sup> with OFF-resistances as high as 10 MΩ. Channel current, gate voltage, and dielectric medium are varied and compared to show their effect on device performance. The presented device and associated techniques show potential for integration in graphene digital-logic architectures.https://ieeexplore.ieee.org/document/9093841/Electrical double layerelectrochemicalfield effectgrapheneliquid dielectricreversible |
| spellingShingle | Cody K. Hayashi David G. Garmire Tyler J. Yamauchi Carlos M. Torres Richard C. Ordonez High On-Off Ratio Graphene Switch via Electrical Double Layer Gating IEEE Access Electrical double layer electrochemical field effect graphene liquid dielectric reversible |
| title | High On-Off Ratio Graphene Switch via Electrical Double Layer Gating |
| title_full | High On-Off Ratio Graphene Switch via Electrical Double Layer Gating |
| title_fullStr | High On-Off Ratio Graphene Switch via Electrical Double Layer Gating |
| title_full_unstemmed | High On-Off Ratio Graphene Switch via Electrical Double Layer Gating |
| title_short | High On-Off Ratio Graphene Switch via Electrical Double Layer Gating |
| title_sort | high on off ratio graphene switch via electrical double layer gating |
| topic | Electrical double layer electrochemical field effect graphene liquid dielectric reversible |
| url | https://ieeexplore.ieee.org/document/9093841/ |
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