DESIGN AND SIMULATION OF A MULTILAYER SOI-MOSFET STRUCTURE FOR IMPROVING SELF-HEATING EFFECTS
In this paper, a new silicon-on-insulator (SOI) device structure is proposed to reduce self-heating effects. Using Si3N4 material is main idea in the structure that has high thermal conductivity respect to silicon dioxide. The device has been verified in two-dimensional device simulation. The result...
| Main Authors: | , |
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| Format: | Article |
| Language: | fas |
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Semnan University
2010-12-01
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| Series: | مجله مدل سازی در مهندسی |
| Subjects: | |
| Online Access: | https://modelling.semnan.ac.ir/article_1571_f828f978237950f97e7702fb41a00169.pdf |
| Summary: | In this paper, a new silicon-on-insulator (SOI) device structure is proposed to reduce self-heating effects. Using Si3N4 material is main idea in the structure that has high thermal conductivity respect to silicon dioxide. The device has been verified in two-dimensional device simulation. The results show that the structure provides a new path to reduce the temperature of the channel of SOI Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) and decreases the temperature in the channel. |
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| ISSN: | 2008-4854 2783-2538 |