A Study On the Structure and Electrical Properties of Pbo.9Sn0.1Se/Si Heterojunction
In this work, as Study on the structural and electrical properties ofPbo.9Sn0.1Se/Si hetrojunction was made by depositing compound of Lead, Tinand Selenide film on Si by thermal evaporation.XRD diffraction analysis of the film, shows the dominant crystalorientation is (200) as well as (Pbo.9Sn0.1Se)...
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| Format: | Article |
| Language: | English |
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Unviversity of Technology- Iraq
2007-12-01
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| Series: | Engineering and Technology Journal |
| Online Access: | https://etj.uotechnology.edu.iq/article_25979_a8503019c97a40e46e65d009993437c2.pdf |
| _version_ | 1797325097971744768 |
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| author | Alwan M. Alwan |
| author_facet | Alwan M. Alwan |
| author_sort | Alwan M. Alwan |
| collection | DOAJ |
| description | In this work, as Study on the structural and electrical properties ofPbo.9Sn0.1Se/Si hetrojunction was made by depositing compound of Lead, Tinand Selenide film on Si by thermal evaporation.XRD diffraction analysis of the film, shows the dominant crystalorientation is (200) as well as (Pbo.9Sn0.1Se) film deposited is polycrystallinestructure.Electrical properties of Pbo.9Sn0.1Se/Si heterojunction detector have beeninvestigated. The electrical properties under dark condition show a rectifyingbehavior with low rectification factor, and exhibit soft breakdown reversecurrent. C-V characteristics suggest that the fabricated diode was abrupttype, built in potential determined by extrapolation from 1/C2-V curve to thepoint (V=0) and it was equal to (0.4V). |
| first_indexed | 2024-03-08T06:05:08Z |
| format | Article |
| id | doaj.art-01848fdf9cea499b8195d9a4960b8946 |
| institution | Directory Open Access Journal |
| issn | 1681-6900 2412-0758 |
| language | English |
| last_indexed | 2024-03-08T06:05:08Z |
| publishDate | 2007-12-01 |
| publisher | Unviversity of Technology- Iraq |
| record_format | Article |
| series | Engineering and Technology Journal |
| spelling | doaj.art-01848fdf9cea499b8195d9a4960b89462024-02-04T17:54:18ZengUnviversity of Technology- IraqEngineering and Technology Journal1681-69002412-07582007-12-0125101149115310.30684/etj.25.10.525979A Study On the Structure and Electrical Properties of Pbo.9Sn0.1Se/Si HeterojunctionAlwan M. AlwanIn this work, as Study on the structural and electrical properties ofPbo.9Sn0.1Se/Si hetrojunction was made by depositing compound of Lead, Tinand Selenide film on Si by thermal evaporation.XRD diffraction analysis of the film, shows the dominant crystalorientation is (200) as well as (Pbo.9Sn0.1Se) film deposited is polycrystallinestructure.Electrical properties of Pbo.9Sn0.1Se/Si heterojunction detector have beeninvestigated. The electrical properties under dark condition show a rectifyingbehavior with low rectification factor, and exhibit soft breakdown reversecurrent. C-V characteristics suggest that the fabricated diode was abrupttype, built in potential determined by extrapolation from 1/C2-V curve to thepoint (V=0) and it was equal to (0.4V).https://etj.uotechnology.edu.iq/article_25979_a8503019c97a40e46e65d009993437c2.pdf |
| spellingShingle | Alwan M. Alwan A Study On the Structure and Electrical Properties of Pbo.9Sn0.1Se/Si Heterojunction Engineering and Technology Journal |
| title | A Study On the Structure and Electrical Properties of Pbo.9Sn0.1Se/Si Heterojunction |
| title_full | A Study On the Structure and Electrical Properties of Pbo.9Sn0.1Se/Si Heterojunction |
| title_fullStr | A Study On the Structure and Electrical Properties of Pbo.9Sn0.1Se/Si Heterojunction |
| title_full_unstemmed | A Study On the Structure and Electrical Properties of Pbo.9Sn0.1Se/Si Heterojunction |
| title_short | A Study On the Structure and Electrical Properties of Pbo.9Sn0.1Se/Si Heterojunction |
| title_sort | study on the structure and electrical properties of pbo 9sn0 1se si heterojunction |
| url | https://etj.uotechnology.edu.iq/article_25979_a8503019c97a40e46e65d009993437c2.pdf |
| work_keys_str_mv | AT alwanmalwan astudyonthestructureandelectricalpropertiesofpbo9sn01sesiheterojunction AT alwanmalwan studyonthestructureandelectricalpropertiesofpbo9sn01sesiheterojunction |