A Study On the Structure and Electrical Properties of Pbo.9Sn0.1Se/Si Heterojunction
In this work, as Study on the structural and electrical properties ofPbo.9Sn0.1Se/Si hetrojunction was made by depositing compound of Lead, Tinand Selenide film on Si by thermal evaporation.XRD diffraction analysis of the film, shows the dominant crystalorientation is (200) as well as (Pbo.9Sn0.1Se)...
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| Format: | Article |
| Language: | English |
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Unviversity of Technology- Iraq
2007-12-01
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| Series: | Engineering and Technology Journal |
| Online Access: | https://etj.uotechnology.edu.iq/article_25979_a8503019c97a40e46e65d009993437c2.pdf |