Semiconductor infrared plasmonics
The coupling between light and collective oscillations of free carriers at metallic surfaces and nanostructures is at the origin of one of the main fields of nanophotonics: plasmonics. The potential applications offered by plasmonics range from biosensing to solar cell technologies and from nonlinea...
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| Format: | Article |
| Language: | English |
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De Gruyter
2019-05-01
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| Series: | Nanophotonics |
| Subjects: | |
| Online Access: | http://www.degruyter.com/view/j/nanoph.2019.8.issue-6/nanoph-2019-0077/nanoph-2019-0077.xml?format=INT |
| _version_ | 1819290196216119296 |
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| author | Taliercio Thierry Biagioni Paolo |
| author_facet | Taliercio Thierry Biagioni Paolo |
| author_sort | Taliercio Thierry |
| collection | DOAJ |
| description | The coupling between light and collective oscillations of free carriers at metallic surfaces and nanostructures is at the origin of one of the main fields of nanophotonics: plasmonics. The potential applications offered by plasmonics range from biosensing to solar cell technologies and from nonlinear optics at the nanoscale to light harvesting and extraction in nanophotonic devices. Heavily doped semiconductors are particularly appealing for the infrared spectral window due to their compatibility with microelectronic technologies, which paves the way toward their integration in low-cost, mass-fabricated devices. In addition, their plasma frequency can be tuned chemically, optically, or electrically over a broad spectral range. This review covers the optical properties of the heavily doped conventional semiconductors such as Ge, Si, or III–V alloys and how they can be successfully employed in plasmonics. The modeling of their specific optical properties and the technological processes to realize nanoantennas, slits, or metasurfaces are presented. We also provide an overview of the applications of this young field of research, mainly focusing on biosensing and active devices, among the most recent developments in semiconductor plasmonics. Finally, an outlook of further research directions and the potential technological transfer is presented. |
| first_indexed | 2024-12-24T03:18:54Z |
| format | Article |
| id | doaj.art-0199c92d3fa340148d4da93e4da58a18 |
| institution | Directory Open Access Journal |
| issn | 2192-8614 |
| language | English |
| last_indexed | 2024-12-24T03:18:54Z |
| publishDate | 2019-05-01 |
| publisher | De Gruyter |
| record_format | Article |
| series | Nanophotonics |
| spelling | doaj.art-0199c92d3fa340148d4da93e4da58a182022-12-21T17:17:32ZengDe GruyterNanophotonics2192-86142019-05-018694999010.1515/nanoph-2019-0077nanoph-2019-0077Semiconductor infrared plasmonicsTaliercio Thierry0Biagioni Paolo1Institute of Electronics and Systems, University of Montpellier, Montpellier, FranceDepartment of Physics, Politecnico di Milano, 20133 Milano, ItalyThe coupling between light and collective oscillations of free carriers at metallic surfaces and nanostructures is at the origin of one of the main fields of nanophotonics: plasmonics. The potential applications offered by plasmonics range from biosensing to solar cell technologies and from nonlinear optics at the nanoscale to light harvesting and extraction in nanophotonic devices. Heavily doped semiconductors are particularly appealing for the infrared spectral window due to their compatibility with microelectronic technologies, which paves the way toward their integration in low-cost, mass-fabricated devices. In addition, their plasma frequency can be tuned chemically, optically, or electrically over a broad spectral range. This review covers the optical properties of the heavily doped conventional semiconductors such as Ge, Si, or III–V alloys and how they can be successfully employed in plasmonics. The modeling of their specific optical properties and the technological processes to realize nanoantennas, slits, or metasurfaces are presented. We also provide an overview of the applications of this young field of research, mainly focusing on biosensing and active devices, among the most recent developments in semiconductor plasmonics. Finally, an outlook of further research directions and the potential technological transfer is presented.http://www.degruyter.com/view/j/nanoph.2019.8.issue-6/nanoph-2019-0077/nanoph-2019-0077.xml?format=INTplasmonicsheavily doped semiconductorsinfrared spectroscopynanoantennasbiosensingactive plasmonics |
| spellingShingle | Taliercio Thierry Biagioni Paolo Semiconductor infrared plasmonics Nanophotonics plasmonics heavily doped semiconductors infrared spectroscopy nanoantennas biosensing active plasmonics |
| title | Semiconductor infrared plasmonics |
| title_full | Semiconductor infrared plasmonics |
| title_fullStr | Semiconductor infrared plasmonics |
| title_full_unstemmed | Semiconductor infrared plasmonics |
| title_short | Semiconductor infrared plasmonics |
| title_sort | semiconductor infrared plasmonics |
| topic | plasmonics heavily doped semiconductors infrared spectroscopy nanoantennas biosensing active plasmonics |
| url | http://www.degruyter.com/view/j/nanoph.2019.8.issue-6/nanoph-2019-0077/nanoph-2019-0077.xml?format=INT |
| work_keys_str_mv | AT talierciothierry semiconductorinfraredplasmonics AT biagionipaolo semiconductorinfraredplasmonics |