Growth of InAs Quantum Dots on Germanium Substrate Using Metal Organic Chemical Vapor Deposition Technique
<p>Abstract</p> <p>Self-assembled InAs quantum dots (QDs) were grown on germanium substrates by metal organic chemical vapor deposition technique. Effects of growth temperature and InAs coverage on the size, density, and height of quantum dots were investigated. Growth temperature...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2009-01-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1007/s11671-009-9439-y |
| _version_ | 1797714673782489088 |
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| author | Tyagi Renu Bag RajeshKumar Singh Mahavir Mohan Premila Haldar T Murlidharan R Dhawan Tanuj Tandon RP |
| author_facet | Tyagi Renu Bag RajeshKumar Singh Mahavir Mohan Premila Haldar T Murlidharan R Dhawan Tanuj Tandon RP |
| author_sort | Tyagi Renu |
| collection | DOAJ |
| description | <p>Abstract</p> <p>Self-assembled InAs quantum dots (QDs) were grown on germanium substrates by metal organic chemical vapor deposition technique. Effects of growth temperature and InAs coverage on the size, density, and height of quantum dots were investigated. Growth temperature was varied from 400 to 450 °C and InAs coverage was varied between 1.40 and 2.35 monolayers (MLs). The surface morphology and structural characteristics of the quantum dots analyzed by atomic force microscope revealed that the density of the InAs quantum dots first increased and then decreased with the amount of InAs coverage; whereas density decreased with increase in growth temperature. It was observed that the size and height of InAs quantum dots increased with increase in both temperature and InAs coverage. The density of QDs was effectively controlled by growth temperature and InAs coverage on GaAs buffer layer.</p> |
| first_indexed | 2024-03-12T07:55:26Z |
| format | Article |
| id | doaj.art-01a028da34e24825b1bdd2cca449bdcd |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T07:55:26Z |
| publishDate | 2009-01-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-01a028da34e24825b1bdd2cca449bdcd2023-09-02T20:11:58ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2009-01-01513137Growth of InAs Quantum Dots on Germanium Substrate Using Metal Organic Chemical Vapor Deposition TechniqueTyagi RenuBag RajeshKumarSingh MahavirMohan PremilaHaldar TMurlidharan RDhawan TanujTandon RP<p>Abstract</p> <p>Self-assembled InAs quantum dots (QDs) were grown on germanium substrates by metal organic chemical vapor deposition technique. Effects of growth temperature and InAs coverage on the size, density, and height of quantum dots were investigated. Growth temperature was varied from 400 to 450 °C and InAs coverage was varied between 1.40 and 2.35 monolayers (MLs). The surface morphology and structural characteristics of the quantum dots analyzed by atomic force microscope revealed that the density of the InAs quantum dots first increased and then decreased with the amount of InAs coverage; whereas density decreased with increase in growth temperature. It was observed that the size and height of InAs quantum dots increased with increase in both temperature and InAs coverage. The density of QDs was effectively controlled by growth temperature and InAs coverage on GaAs buffer layer.</p>http://dx.doi.org/10.1007/s11671-009-9439-yQuantum dotsGe substrateInAsSelf-assembled |
| spellingShingle | Tyagi Renu Bag RajeshKumar Singh Mahavir Mohan Premila Haldar T Murlidharan R Dhawan Tanuj Tandon RP Growth of InAs Quantum Dots on Germanium Substrate Using Metal Organic Chemical Vapor Deposition Technique Nanoscale Research Letters Quantum dots Ge substrate InAs Self-assembled |
| title | Growth of InAs Quantum Dots on Germanium Substrate Using Metal Organic Chemical Vapor Deposition Technique |
| title_full | Growth of InAs Quantum Dots on Germanium Substrate Using Metal Organic Chemical Vapor Deposition Technique |
| title_fullStr | Growth of InAs Quantum Dots on Germanium Substrate Using Metal Organic Chemical Vapor Deposition Technique |
| title_full_unstemmed | Growth of InAs Quantum Dots on Germanium Substrate Using Metal Organic Chemical Vapor Deposition Technique |
| title_short | Growth of InAs Quantum Dots on Germanium Substrate Using Metal Organic Chemical Vapor Deposition Technique |
| title_sort | growth of inas quantum dots on germanium substrate using metal organic chemical vapor deposition technique |
| topic | Quantum dots Ge substrate InAs Self-assembled |
| url | http://dx.doi.org/10.1007/s11671-009-9439-y |
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