Structural and Electrical Properties Dependence on annealing temperature of a-Ge:Sb/c-Si Heterojunction
In this work, we are Study the effect of annealing temperature on the structure of a-Ge films doped with Sb and the electrical properties of a-Ge:Sb/c-Si heterojunction fabricated by deposition of a-Ge:Sb film on c-Si by using thermal evaporation. Electrical properties of aGe:Sb/c-Si heterojunctio...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
University of Baghdad
2016-12-01
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| Series: | Ibn Al-Haitham Journal for Pure and Applied Sciences |
| Online Access: | https://jih.uobaghdad.edu.iq/index.php/j/article/view/820 |
| Summary: | In this work, we are Study the effect of annealing temperature on the structure of a-Ge films doped with Sb and the electrical properties of a-Ge:Sb/c-Si heterojunction fabricated by deposition of a-Ge:Sb film on c-Si by using thermal evaporation. Electrical properties of aGe:Sb/c-Si heterojunction include I-V characteristics in dark at different annealing temperatures and C-V characteristics and with the C-V characteristics suggest that the fabricated heterojunction was abrupt type, built in potential determined by extrapolation from 1/C2-V curve and show that the built - inpotential (Vbi) for the Ge:Sb/Si system increases with the increase of annealing temperatures
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| ISSN: | 1609-4042 2521-3407 |