Capacitance Characteristics and Breakdown Mechanism of AlGaN/GaN Metal–Semiconductor–Metal Varactors and their Anti-Surge Application

Capacitance Characteristics and Breakdown Mechanism of AlGaN/GaN Metal–Semiconductor–Metal Varactors and their Anti-Surge Application

The AlGaN/GaN materials with a wide band gap, high electron mobility, and high breakdown voltage are suitable for manufacturing high-power and high-frequency electronic devices. In this study, metal Schottky contact electrodes of different dimensions are prepared on AlGaN/GaN wafers to fabricate met...

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Bibliographic Details
Main Authors:	Chien-Fu Shih, Yu-Li Hsieh, Liann-Be Chang, Ming-Jer Jeng, Zi-Xin Ding, Shao-An Huang
Format:	Article
Language:	English
Published:	MDPI AG 2020-04-01
Series:	Crystals
Subjects:	AlGaN/GaN metal–semiconductor–metal varactors breakdown anti-surge
Online Access:	https://www.mdpi.com/2073-4352/10/4/292

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