Study of J-V Characteristics of Microcrystalline Silicon Solar Cell on The Structure of P-I-N Homojunction
Microcrystalline silicon (μc-Si) is a silicon semiconductor material with a crystalline structure in the amorphous phase. Here, the transport phenomenon in this phase has been modeled to produce charge carrier distribution profile and current density-voltage characteristics. The calculations were ob...
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| Format: | Article |
| Language: | English |
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Physics Department, Faculty of Mathematics and Natural Sciences University of Jember
2020-05-01
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| Series: | Computational and Experimental Research in Materials and Renewable Energy |
| Online Access: | https://jurnal.unej.ac.id/index.php/CERiMRE/article/view/26416 |
| _version_ | 1811300420757225472 |
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| author | Yuningtyas Nely Kusuma Dewi Endhah Purwandari Khoirul Anwar Misto Misto |
| author_facet | Yuningtyas Nely Kusuma Dewi Endhah Purwandari Khoirul Anwar Misto Misto |
| author_sort | Yuningtyas Nely Kusuma Dewi |
| collection | DOAJ |
| description | Microcrystalline silicon (μc-Si) is a silicon semiconductor material with a crystalline structure in the amorphous phase. Here, the transport phenomenon in this phase has been modeled to produce charge carrier distribution profile and current density-voltage characteristics. The calculations were obtained by solving Poisson and Continuity equations on crystal and amorphous materials which are modeled in one-dimensional p-i-n homojunction, using finite element method. The simulation results of the charge carrier distribution profile show that the highest electron concentration in the n-layer of 1018 cm-1, and the highest hole concentration in the p-layer of 1018 cm-1. The result current density-voltage (J-V) characteristics curve show that the open circuitt voltage of 0,6 volts and short-circuit current density of 26.4 mA/cm. The energy conversion efficiency of 9.02% with a fill factor of 0.569. |
| first_indexed | 2024-04-13T06:51:52Z |
| format | Article |
| id | doaj.art-0248b636f9f74153bf589969275b48ed |
| institution | Directory Open Access Journal |
| issn | 2747-173X |
| language | English |
| last_indexed | 2024-04-13T06:51:52Z |
| publishDate | 2020-05-01 |
| publisher | Physics Department, Faculty of Mathematics and Natural Sciences University of Jember |
| record_format | Article |
| series | Computational and Experimental Research in Materials and Renewable Energy |
| spelling | doaj.art-0248b636f9f74153bf589969275b48ed2022-12-22T02:57:23ZengPhysics Department, Faculty of Mathematics and Natural Sciences University of JemberComputational and Experimental Research in Materials and Renewable Energy2747-173X2020-05-0131273710.19184/cerimre.v3i1.2641626416Study of J-V Characteristics of Microcrystalline Silicon Solar Cell on The Structure of P-I-N HomojunctionYuningtyas Nely Kusuma Dewi0Endhah Purwandari1Khoirul Anwar2Misto Misto3Department of Physics, Faculty of Science and Data Analytics, Institut Teknologi Sepuluh Nopember, SurabayaDepartment of Physics, Faculty of Mathematics and Natural Sciences, University of JemberDepartment of Physics, Faculty of Mathematics and Natural Sciences, University of JemberDepartment of Physics, Faculty of Mathematics and Natural Sciences, University of JemberMicrocrystalline silicon (μc-Si) is a silicon semiconductor material with a crystalline structure in the amorphous phase. Here, the transport phenomenon in this phase has been modeled to produce charge carrier distribution profile and current density-voltage characteristics. The calculations were obtained by solving Poisson and Continuity equations on crystal and amorphous materials which are modeled in one-dimensional p-i-n homojunction, using finite element method. The simulation results of the charge carrier distribution profile show that the highest electron concentration in the n-layer of 1018 cm-1, and the highest hole concentration in the p-layer of 1018 cm-1. The result current density-voltage (J-V) characteristics curve show that the open circuitt voltage of 0,6 volts and short-circuit current density of 26.4 mA/cm. The energy conversion efficiency of 9.02% with a fill factor of 0.569.https://jurnal.unej.ac.id/index.php/CERiMRE/article/view/26416 |
| spellingShingle | Yuningtyas Nely Kusuma Dewi Endhah Purwandari Khoirul Anwar Misto Misto Study of J-V Characteristics of Microcrystalline Silicon Solar Cell on The Structure of P-I-N Homojunction Computational and Experimental Research in Materials and Renewable Energy |
| title | Study of J-V Characteristics of Microcrystalline Silicon Solar Cell on The Structure of P-I-N Homojunction |
| title_full | Study of J-V Characteristics of Microcrystalline Silicon Solar Cell on The Structure of P-I-N Homojunction |
| title_fullStr | Study of J-V Characteristics of Microcrystalline Silicon Solar Cell on The Structure of P-I-N Homojunction |
| title_full_unstemmed | Study of J-V Characteristics of Microcrystalline Silicon Solar Cell on The Structure of P-I-N Homojunction |
| title_short | Study of J-V Characteristics of Microcrystalline Silicon Solar Cell on The Structure of P-I-N Homojunction |
| title_sort | study of j v characteristics of microcrystalline silicon solar cell on the structure of p i n homojunction |
| url | https://jurnal.unej.ac.id/index.php/CERiMRE/article/view/26416 |
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