INFLUENCE OF ANODIC ALUMINA USED AS SEPARATING DIELECTRIC OF SILICON AVALANCHE LEDs ON DIODE CHARACTERISTICS
A study of the influence of the formation regimes of avalanche LEDs based on nanostructured silicon on the parameters of the formed devices, such as the light emission voltage and the stability of operation has been performed. These parameters are an important factor for the practical use of avalanc...
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| Language: | Russian |
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Educational institution «Belarusian State University of Informatics and Radioelectronics»
2019-12-01
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| Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
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| Online Access: | https://doklady.bsuir.by/jour/article/view/2506 |
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| author | Vi Le Dinh A. Yu. Klutsky A. A. Dolbik A. A. Leshok S. K. Lazarouk |
| author_facet | Vi Le Dinh A. Yu. Klutsky A. A. Dolbik A. A. Leshok S. K. Lazarouk |
| author_sort | Vi Le Dinh |
| collection | DOAJ |
| description | A study of the influence of the formation regimes of avalanche LEDs based on nanostructured silicon on the parameters of the formed devices, such as the light emission voltage and the stability of operation has been performed. These parameters are an important factor for the practical use of avalanche LEDs in the development of silicon photonics products, the progress of which is associated with the future of integrated electronics. For the first time, the technological operation of local through electrochemical anodizing of aluminum in various electrolytes for the formation of a separating dielectric of Schottky contacts is presented. The influence of the built-in electric charge in the separation dielectric of silicon avalanche LEDs on their current-voltage characteristics is studied. It was found that the built-in negative electric charge increases the breakdown voltage of the Schottky contact, which results in an increase of the light emission efficiency of the diode structures. An explanation of this effect is presented on the basis that the built-in negative electric charge inside the anode oxide also creates a space charge region in silicon, which helps to reduce the effect of the concentration of field lines at the edges of diode structures, performing the function of protecting the Schottky contact from edge effects as well as protective areas do. It has been established that the highest avalanche breakdown voltage is observed in diode structures with anodic oxide formed in an electrolyte based on an aqueous solution of phosphoric acid. An analysis of the characteristics of LEDs at different temperatures of silicon substrates showed an increase of breakdown voltage with increasing temperature, which is typical for avalanche breakdown during impact ionization. Stable light emission of the formed LEDs was demonstrated in a wide range of operating voltages (8–16 V). The use of silicon avalanche LEDs both as discrete devices and in integrated electronics in general has been discussed. |
| first_indexed | 2024-04-10T03:11:51Z |
| format | Article |
| id | doaj.art-029ecc4c740a4e199a7e0f56b217ac1a |
| institution | Directory Open Access Journal |
| issn | 1729-7648 |
| language | Russian |
| last_indexed | 2024-04-10T03:11:51Z |
| publishDate | 2019-12-01 |
| publisher | Educational institution «Belarusian State University of Informatics and Radioelectronics» |
| record_format | Article |
| series | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| spelling | doaj.art-029ecc4c740a4e199a7e0f56b217ac1a2023-03-13T07:33:20ZrusEducational institution «Belarusian State University of Informatics and Radioelectronics»Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki1729-76482019-12-0107-816517210.35596/1729-7648-2019-126-8-165-1721556INFLUENCE OF ANODIC ALUMINA USED AS SEPARATING DIELECTRIC OF SILICON AVALANCHE LEDs ON DIODE CHARACTERISTICSVi Le Dinh0A. Yu. Klutsky1A. A. Dolbik2A. A. Leshok3S. K. Lazarouk4Belarusian State University of Informatics and RadioelectronicsBelarusian State University of Informatics and RadioelectronicsBelarusian State University of Informatics and RadioelectronicsBelarusian State University of Informatics and RadioelectronicsBelarusian State University of Informatics and RadioelectronicsA study of the influence of the formation regimes of avalanche LEDs based on nanostructured silicon on the parameters of the formed devices, such as the light emission voltage and the stability of operation has been performed. These parameters are an important factor for the practical use of avalanche LEDs in the development of silicon photonics products, the progress of which is associated with the future of integrated electronics. For the first time, the technological operation of local through electrochemical anodizing of aluminum in various electrolytes for the formation of a separating dielectric of Schottky contacts is presented. The influence of the built-in electric charge in the separation dielectric of silicon avalanche LEDs on their current-voltage characteristics is studied. It was found that the built-in negative electric charge increases the breakdown voltage of the Schottky contact, which results in an increase of the light emission efficiency of the diode structures. An explanation of this effect is presented on the basis that the built-in negative electric charge inside the anode oxide also creates a space charge region in silicon, which helps to reduce the effect of the concentration of field lines at the edges of diode structures, performing the function of protecting the Schottky contact from edge effects as well as protective areas do. It has been established that the highest avalanche breakdown voltage is observed in diode structures with anodic oxide formed in an electrolyte based on an aqueous solution of phosphoric acid. An analysis of the characteristics of LEDs at different temperatures of silicon substrates showed an increase of breakdown voltage with increasing temperature, which is typical for avalanche breakdown during impact ionization. Stable light emission of the formed LEDs was demonstrated in a wide range of operating voltages (8–16 V). The use of silicon avalanche LEDs both as discrete devices and in integrated electronics in general has been discussed.https://doklady.bsuir.by/jour/article/view/2506avalanche ledsanodic aluminasilicon nanoparticlesbuilt-in electric charge |
| spellingShingle | Vi Le Dinh A. Yu. Klutsky A. A. Dolbik A. A. Leshok S. K. Lazarouk INFLUENCE OF ANODIC ALUMINA USED AS SEPARATING DIELECTRIC OF SILICON AVALANCHE LEDs ON DIODE CHARACTERISTICS Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki avalanche leds anodic alumina silicon nanoparticles built-in electric charge |
| title | INFLUENCE OF ANODIC ALUMINA USED AS SEPARATING DIELECTRIC OF SILICON AVALANCHE LEDs ON DIODE CHARACTERISTICS |
| title_full | INFLUENCE OF ANODIC ALUMINA USED AS SEPARATING DIELECTRIC OF SILICON AVALANCHE LEDs ON DIODE CHARACTERISTICS |
| title_fullStr | INFLUENCE OF ANODIC ALUMINA USED AS SEPARATING DIELECTRIC OF SILICON AVALANCHE LEDs ON DIODE CHARACTERISTICS |
| title_full_unstemmed | INFLUENCE OF ANODIC ALUMINA USED AS SEPARATING DIELECTRIC OF SILICON AVALANCHE LEDs ON DIODE CHARACTERISTICS |
| title_short | INFLUENCE OF ANODIC ALUMINA USED AS SEPARATING DIELECTRIC OF SILICON AVALANCHE LEDs ON DIODE CHARACTERISTICS |
| title_sort | influence of anodic alumina used as separating dielectric of silicon avalanche leds on diode characteristics |
| topic | avalanche leds anodic alumina silicon nanoparticles built-in electric charge |
| url | https://doklady.bsuir.by/jour/article/view/2506 |
| work_keys_str_mv | AT viledinh influenceofanodicaluminausedasseparatingdielectricofsiliconavalancheledsondiodecharacteristics AT ayuklutsky influenceofanodicaluminausedasseparatingdielectricofsiliconavalancheledsondiodecharacteristics AT aadolbik influenceofanodicaluminausedasseparatingdielectricofsiliconavalancheledsondiodecharacteristics AT aaleshok influenceofanodicaluminausedasseparatingdielectricofsiliconavalancheledsondiodecharacteristics AT sklazarouk influenceofanodicaluminausedasseparatingdielectricofsiliconavalancheledsondiodecharacteristics |