Vertical‐organic‐nanocrystal‐arrays for crossbar memristors with tuning switching dynamics toward neuromorphic computing
Abstract Memristors proposed by Leon Chua provide a new type of memory device for novel neuromorphic computing applications. However, the approaching of distinct multi‐intermediate states for tunable switching dynamics, the controlling of conducting filaments (CFs) toward high device repeatability a...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2021-03-01
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| Series: | SmartMat |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/smm2.1022 |
| _version_ | 1818976669626531840 |
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| author | Fangxu Yang Lingjie Sun Qingxi Duan Huanli Dong Zhaokun Jing Yuchao Yang Rongjin Li Xiaotao Zhang Wenping Hu Leon Chua |
| author_facet | Fangxu Yang Lingjie Sun Qingxi Duan Huanli Dong Zhaokun Jing Yuchao Yang Rongjin Li Xiaotao Zhang Wenping Hu Leon Chua |
| author_sort | Fangxu Yang |
| collection | DOAJ |
| description | Abstract Memristors proposed by Leon Chua provide a new type of memory device for novel neuromorphic computing applications. However, the approaching of distinct multi‐intermediate states for tunable switching dynamics, the controlling of conducting filaments (CFs) toward high device repeatability and reproducibility, and the ability for large‐scale preparation devices, remain full of challenges. Here, we show that vertical‐organic‐nanocrystal‐arrays (VONAs) could make a way toward the challenges. The perfect one‐dimensional structure of the VONAs could confine the CFs accurately with fine‐tune resistance states in a broad range of 103 ratios. The availability of large‐area VONAs makes the fabrication of large‐area crossbar memristor arrays facilely, and the analog switching characteristic of the memristors is to effectively imitate different kinds of synaptic plasticity, indicating their great potential in future applications. |
| first_indexed | 2024-12-20T16:15:31Z |
| format | Article |
| id | doaj.art-02ddb3f1e96f443cbea460405466d6de |
| institution | Directory Open Access Journal |
| issn | 2688-819X |
| language | English |
| last_indexed | 2024-12-20T16:15:31Z |
| publishDate | 2021-03-01 |
| publisher | Wiley |
| record_format | Article |
| series | SmartMat |
| spelling | doaj.art-02ddb3f1e96f443cbea460405466d6de2022-12-21T19:33:48ZengWileySmartMat2688-819X2021-03-01219910810.1002/smm2.1022Vertical‐organic‐nanocrystal‐arrays for crossbar memristors with tuning switching dynamics toward neuromorphic computingFangxu Yang0Lingjie Sun1Qingxi Duan2Huanli Dong3Zhaokun Jing4Yuchao Yang5Rongjin Li6Xiaotao Zhang7Wenping Hu8Leon Chua9Key Laboratory of Molecular Optoelectronic Sciences, School of Science Tianjin University Tianjin ChinaKey Laboratory of Molecular Optoelectronic Sciences, School of Science Tianjin University Tianjin ChinaKey Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics Peking University Beijing ChinaBeijing National Research Center for Molecular Sciences Chinese Academy of Sciences Beijing ChinaKey Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics Peking University Beijing ChinaKey Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics Peking University Beijing ChinaKey Laboratory of Molecular Optoelectronic Sciences, School of Science Tianjin University Tianjin ChinaKey Laboratory of Molecular Optoelectronic Sciences, School of Science Tianjin University Tianjin ChinaKey Laboratory of Molecular Optoelectronic Sciences, School of Science Tianjin University Tianjin ChinaDepartment of Electrical Engineering and Computer Sciences University of California Berkeley California USAAbstract Memristors proposed by Leon Chua provide a new type of memory device for novel neuromorphic computing applications. However, the approaching of distinct multi‐intermediate states for tunable switching dynamics, the controlling of conducting filaments (CFs) toward high device repeatability and reproducibility, and the ability for large‐scale preparation devices, remain full of challenges. Here, we show that vertical‐organic‐nanocrystal‐arrays (VONAs) could make a way toward the challenges. The perfect one‐dimensional structure of the VONAs could confine the CFs accurately with fine‐tune resistance states in a broad range of 103 ratios. The availability of large‐area VONAs makes the fabrication of large‐area crossbar memristor arrays facilely, and the analog switching characteristic of the memristors is to effectively imitate different kinds of synaptic plasticity, indicating their great potential in future applications.https://doi.org/10.1002/smm2.1022conducting filamentmemristororganic electronicsorganic single crystal |
| spellingShingle | Fangxu Yang Lingjie Sun Qingxi Duan Huanli Dong Zhaokun Jing Yuchao Yang Rongjin Li Xiaotao Zhang Wenping Hu Leon Chua Vertical‐organic‐nanocrystal‐arrays for crossbar memristors with tuning switching dynamics toward neuromorphic computing SmartMat conducting filament memristor organic electronics organic single crystal |
| title | Vertical‐organic‐nanocrystal‐arrays for crossbar memristors with tuning switching dynamics toward neuromorphic computing |
| title_full | Vertical‐organic‐nanocrystal‐arrays for crossbar memristors with tuning switching dynamics toward neuromorphic computing |
| title_fullStr | Vertical‐organic‐nanocrystal‐arrays for crossbar memristors with tuning switching dynamics toward neuromorphic computing |
| title_full_unstemmed | Vertical‐organic‐nanocrystal‐arrays for crossbar memristors with tuning switching dynamics toward neuromorphic computing |
| title_short | Vertical‐organic‐nanocrystal‐arrays for crossbar memristors with tuning switching dynamics toward neuromorphic computing |
| title_sort | vertical organic nanocrystal arrays for crossbar memristors with tuning switching dynamics toward neuromorphic computing |
| topic | conducting filament memristor organic electronics organic single crystal |
| url | https://doi.org/10.1002/smm2.1022 |
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