Properties of Spatially Indirect Excitons in Nanowire Arrays

This paper deals with the excitons formed by electrons and holes located in different, closely placed semiconducting nanowires (spatially indirect excitons). We calculated the charge densities and the binding energies of the excitons for different nanowire diameters <i>D</i> and distance...

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Main Authors: Vladimir N. Pyrkov, Victor M. Burlakov
Format: Article
Language:English
Published: MDPI AG 2022-05-01
Series:Applied Sciences
Subjects:
Online Access:https://www.mdpi.com/2076-3417/12/10/4924
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author Vladimir N. Pyrkov
Victor M. Burlakov
author_facet Vladimir N. Pyrkov
Victor M. Burlakov
author_sort Vladimir N. Pyrkov
collection DOAJ
description This paper deals with the excitons formed by electrons and holes located in different, closely placed semiconducting nanowires (spatially indirect excitons). We calculated the charge densities and the binding energies of the excitons for different nanowire diameters <i>D</i> and distances <i>h</i> between the nanowires. Together with the estimated exciton lifetimes, these results suggest that at certain <i>h</i> and <i>D,</i> the spatially indirect excitons in the nanowire arrays may have the potential to serve as information-processing units. Possible ways of exciton generation in the nanowire arrays are discussed.
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spelling doaj.art-02eaedd6ea08417ab37bdfe6086745a12023-11-23T09:55:10ZengMDPI AGApplied Sciences2076-34172022-05-011210492410.3390/app12104924Properties of Spatially Indirect Excitons in Nanowire ArraysVladimir N. Pyrkov0Victor M. Burlakov1Space Research Institute, Russian Academy of Sciences (IKI), 84/32 Profsoyuznaya Str., 117997 Moscow, RussiaLinacre College, University of Oxford, St. Cross Road, Oxford OX1 3JA, UKThis paper deals with the excitons formed by electrons and holes located in different, closely placed semiconducting nanowires (spatially indirect excitons). We calculated the charge densities and the binding energies of the excitons for different nanowire diameters <i>D</i> and distances <i>h</i> between the nanowires. Together with the estimated exciton lifetimes, these results suggest that at certain <i>h</i> and <i>D,</i> the spatially indirect excitons in the nanowire arrays may have the potential to serve as information-processing units. Possible ways of exciton generation in the nanowire arrays are discussed.https://www.mdpi.com/2076-3417/12/10/4924spatially indirect excitonsnanowiresbinding energyelectron tunnelingexciton dissociation
spellingShingle Vladimir N. Pyrkov
Victor M. Burlakov
Properties of Spatially Indirect Excitons in Nanowire Arrays
Applied Sciences
spatially indirect excitons
nanowires
binding energy
electron tunneling
exciton dissociation
title Properties of Spatially Indirect Excitons in Nanowire Arrays
title_full Properties of Spatially Indirect Excitons in Nanowire Arrays
title_fullStr Properties of Spatially Indirect Excitons in Nanowire Arrays
title_full_unstemmed Properties of Spatially Indirect Excitons in Nanowire Arrays
title_short Properties of Spatially Indirect Excitons in Nanowire Arrays
title_sort properties of spatially indirect excitons in nanowire arrays
topic spatially indirect excitons
nanowires
binding energy
electron tunneling
exciton dissociation
url https://www.mdpi.com/2076-3417/12/10/4924
work_keys_str_mv AT vladimirnpyrkov propertiesofspatiallyindirectexcitonsinnanowirearrays
AT victormburlakov propertiesofspatiallyindirectexcitonsinnanowirearrays