Degree of Polarization of Cathodoluminescence from a (100) GaAs Substrate with SiN Stripes
Notes on fits of analytic estimations, 2D finite element method (FEM), and 3D FEM simulations to measurements of the cathodoluminescence (CL) and to the degree of polarization (DOP) of the CL from the top surface of a <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML"...
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| Format: | Article |
| Language: | English |
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MDPI AG
2024-01-01
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| Series: | Optics |
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| Online Access: | https://www.mdpi.com/2673-3269/5/1/2 |
| _version_ | 1797239699913310208 |
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| author | Daniel T. Cassidy Philippe Pagnod-Rossiaux Merwan Mokhtari |
| author_facet | Daniel T. Cassidy Philippe Pagnod-Rossiaux Merwan Mokhtari |
| author_sort | Daniel T. Cassidy |
| collection | DOAJ |
| description | Notes on fits of analytic estimations, 2D finite element method (FEM), and 3D FEM simulations to measurements of the cathodoluminescence (CL) and to the degree of polarization (DOP) of the CL from the top surface of a <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mo>(</mo><mn>100</mn><mo>)</mo></mrow></semantics></math></inline-formula> GaAs substrate with a 6.22 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi mathvariant="sans-serif">μ</mi></semantics></math></inline-formula>m wide SiN stripe are presented. Three interesting features are found in the DOP of CL data. Presumably these features are noticeable owing to the spatial resolution of the CL measurement system. Comparisons of both strain and spatial resolutions obtained by CL and photoluminescence (PL) systems are presented. The width of the central feature in the measured DOP is less than the width of the SiN, as measured from the CL. This suggests horizontal cracks or de-laminations into each side of the SiN of about 0.7 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi mathvariant="sans-serif">μ</mi></semantics></math></inline-formula>m. In addition, it appears that deformed regions of widths of ≈1.5 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi mathvariant="sans-serif">μ</mi></semantics></math></inline-formula>m and adjacent to the SiN must exist to explain some of the features. |
| first_indexed | 2024-04-24T17:55:42Z |
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| institution | Directory Open Access Journal |
| issn | 2673-3269 |
| language | English |
| last_indexed | 2024-04-24T17:55:42Z |
| publishDate | 2024-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Optics |
| spelling | doaj.art-02f3d8b74b434eb99cdc571a17d5b5e92024-03-27T13:58:32ZengMDPI AGOptics2673-32692024-01-0151114310.3390/opt5010002Degree of Polarization of Cathodoluminescence from a (100) GaAs Substrate with SiN StripesDaniel T. Cassidy0Philippe Pagnod-Rossiaux1Merwan Mokhtari2Department of Engineering Physics, McMaster University, Hamilton, ON L8S 4L7, Canada3SP Technologies, Route de Villejuste, F-91625 Nozay, CEDEX, France3SP Technologies, Route de Villejuste, F-91625 Nozay, CEDEX, FranceNotes on fits of analytic estimations, 2D finite element method (FEM), and 3D FEM simulations to measurements of the cathodoluminescence (CL) and to the degree of polarization (DOP) of the CL from the top surface of a <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mo>(</mo><mn>100</mn><mo>)</mo></mrow></semantics></math></inline-formula> GaAs substrate with a 6.22 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi mathvariant="sans-serif">μ</mi></semantics></math></inline-formula>m wide SiN stripe are presented. Three interesting features are found in the DOP of CL data. Presumably these features are noticeable owing to the spatial resolution of the CL measurement system. Comparisons of both strain and spatial resolutions obtained by CL and photoluminescence (PL) systems are presented. The width of the central feature in the measured DOP is less than the width of the SiN, as measured from the CL. This suggests horizontal cracks or de-laminations into each side of the SiN of about 0.7 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi mathvariant="sans-serif">μ</mi></semantics></math></inline-formula>m. In addition, it appears that deformed regions of widths of ≈1.5 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi mathvariant="sans-serif">μ</mi></semantics></math></inline-formula>m and adjacent to the SiN must exist to explain some of the features.https://www.mdpi.com/2673-3269/5/1/2degree of polarizationcathodoluminescenceGaAsSiN stripestrainstress |
| spellingShingle | Daniel T. Cassidy Philippe Pagnod-Rossiaux Merwan Mokhtari Degree of Polarization of Cathodoluminescence from a (100) GaAs Substrate with SiN Stripes Optics degree of polarization cathodoluminescence GaAs SiN stripe strain stress |
| title | Degree of Polarization of Cathodoluminescence from a (100) GaAs Substrate with SiN Stripes |
| title_full | Degree of Polarization of Cathodoluminescence from a (100) GaAs Substrate with SiN Stripes |
| title_fullStr | Degree of Polarization of Cathodoluminescence from a (100) GaAs Substrate with SiN Stripes |
| title_full_unstemmed | Degree of Polarization of Cathodoluminescence from a (100) GaAs Substrate with SiN Stripes |
| title_short | Degree of Polarization of Cathodoluminescence from a (100) GaAs Substrate with SiN Stripes |
| title_sort | degree of polarization of cathodoluminescence from a 100 gaas substrate with sin stripes |
| topic | degree of polarization cathodoluminescence GaAs SiN stripe strain stress |
| url | https://www.mdpi.com/2673-3269/5/1/2 |
| work_keys_str_mv | AT danieltcassidy degreeofpolarizationofcathodoluminescencefroma100gaassubstratewithsinstripes AT philippepagnodrossiaux degreeofpolarizationofcathodoluminescencefroma100gaassubstratewithsinstripes AT merwanmokhtari degreeofpolarizationofcathodoluminescencefroma100gaassubstratewithsinstripes |