Soft X-ray angle-resolved photoemission spectroscopy of heavily boron-doped superconducting diamond films
We have performed soft X-ray angle-resolved photoemission spectroscopy (SXARPES) of microwave plasma-assisted chemical vapor deposition diamond films with different B concentrations in order to study the origin of the metallic behavior of superconducting diamond. SXARPES results clearly show valence...
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| Format: | Article |
| Language: | English |
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Taylor & Francis Group
2006-01-01
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| Series: | Science and Technology of Advanced Materials |
| Online Access: | http://www.iop.org/EJ/abstract/-search=58672466.17/1468-6996/7/S1/A04 |
| _version_ | 1819135762174574592 |
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| author | T. Yokoya, T. Nakamura, T. Matushita, T. Muro, H. Okazaki, M. Arita, K. Shimada, H. Namatame, M. Taniguchi, Y. Takano, M. Nagao, T. Takenouchi, H. Kawarada and T. Oguchi |
| author_facet | T. Yokoya, T. Nakamura, T. Matushita, T. Muro, H. Okazaki, M. Arita, K. Shimada, H. Namatame, M. Taniguchi, Y. Takano, M. Nagao, T. Takenouchi, H. Kawarada and T. Oguchi |
| author_sort | T. Yokoya, T. Nakamura, T. Matushita, T. Muro, H. Okazaki, M. Arita, K. Shimada, H. Namatame, M. Taniguchi, Y. Takano, M. Nagao, T. Takenouchi, H. Kawarada and T. Oguchi |
| collection | DOAJ |
| description | We have performed soft X-ray angle-resolved photoemission spectroscopy (SXARPES) of microwave plasma-assisted chemical vapor deposition diamond films with different B concentrations in order to study the origin of the metallic behavior of superconducting diamond. SXARPES results clearly show valence band dispersions with a bandwidth of ~23 eV and with a top of the valence band at gamma point in the Brillouin zone, which are consistent with the calculated valence band dispersions of pure diamond. Boron concentration-dependent band dispersions near the Fermi level (EF) exhibit a systematic shift of EF, indicating depopulation of electrons due to hole doping. These SXARPES results indicate that diamond bands retain for heavy boron doping and holes in the diamond band are responsible for the metallic states leading to superconductivity at low temperature. A high-resolution photoemission spectroscopy spectrum near EF of a heavily boron-doped diamond superconductor is also presented. |
| first_indexed | 2024-12-22T10:24:14Z |
| format | Article |
| id | doaj.art-0312602091fe42758f3a2b60708c7c5c |
| institution | Directory Open Access Journal |
| issn | 1468-6996 1878-5514 |
| language | English |
| last_indexed | 2024-12-22T10:24:14Z |
| publishDate | 2006-01-01 |
| publisher | Taylor & Francis Group |
| record_format | Article |
| series | Science and Technology of Advanced Materials |
| spelling | doaj.art-0312602091fe42758f3a2b60708c7c5c2022-12-21T18:29:32ZengTaylor & Francis GroupScience and Technology of Advanced Materials1468-69961878-55142006-01-017S1S12Soft X-ray angle-resolved photoemission spectroscopy of heavily boron-doped superconducting diamond filmsT. Yokoya, T. Nakamura, T. Matushita, T. Muro, H. Okazaki, M. Arita, K. Shimada, H. Namatame, M. Taniguchi, Y. Takano, M. Nagao, T. Takenouchi, H. Kawarada and T. OguchiWe have performed soft X-ray angle-resolved photoemission spectroscopy (SXARPES) of microwave plasma-assisted chemical vapor deposition diamond films with different B concentrations in order to study the origin of the metallic behavior of superconducting diamond. SXARPES results clearly show valence band dispersions with a bandwidth of ~23 eV and with a top of the valence band at gamma point in the Brillouin zone, which are consistent with the calculated valence band dispersions of pure diamond. Boron concentration-dependent band dispersions near the Fermi level (EF) exhibit a systematic shift of EF, indicating depopulation of electrons due to hole doping. These SXARPES results indicate that diamond bands retain for heavy boron doping and holes in the diamond band are responsible for the metallic states leading to superconductivity at low temperature. A high-resolution photoemission spectroscopy spectrum near EF of a heavily boron-doped diamond superconductor is also presented.http://www.iop.org/EJ/abstract/-search=58672466.17/1468-6996/7/S1/A04 |
| spellingShingle | T. Yokoya, T. Nakamura, T. Matushita, T. Muro, H. Okazaki, M. Arita, K. Shimada, H. Namatame, M. Taniguchi, Y. Takano, M. Nagao, T. Takenouchi, H. Kawarada and T. Oguchi Soft X-ray angle-resolved photoemission spectroscopy of heavily boron-doped superconducting diamond films Science and Technology of Advanced Materials |
| title | Soft X-ray angle-resolved photoemission spectroscopy of heavily boron-doped superconducting diamond films |
| title_full | Soft X-ray angle-resolved photoemission spectroscopy of heavily boron-doped superconducting diamond films |
| title_fullStr | Soft X-ray angle-resolved photoemission spectroscopy of heavily boron-doped superconducting diamond films |
| title_full_unstemmed | Soft X-ray angle-resolved photoemission spectroscopy of heavily boron-doped superconducting diamond films |
| title_short | Soft X-ray angle-resolved photoemission spectroscopy of heavily boron-doped superconducting diamond films |
| title_sort | soft x ray angle resolved photoemission spectroscopy of heavily boron doped superconducting diamond films |
| url | http://www.iop.org/EJ/abstract/-search=58672466.17/1468-6996/7/S1/A04 |
| work_keys_str_mv | AT tyokoyatnakamuratmatushitatmurohokazakimaritakshimadahnamatamemtaniguchiytakanomnagaottakenouchihkawaradaandtoguchi softxrayangleresolvedphotoemissionspectroscopyofheavilyborondopedsuperconductingdiamondfilms |