Yb:MoO<sub>3</sub>/Ag/MoO<sub>3</sub> Multilayer Transparent Top Cathode for Top-Emitting Green Quantum Dot Light-Emitting Diodes
In this study, we report on the application of a dielectric/ultra-thin metal/dielectric (DMD) multilayer consisting of ytterbium (Yb)-doped molybdenum oxide (MoO<sub>3</sub>)/silver (Ag)/MoO<sub>3</sub> stacked as the transparent cathode in top-emitting green quantum dot ligh...
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MDPI AG
2020-04-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/10/4/663 |
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| author | Chun-Yu Lee Yi-Min Chen Yao-Zong Deng Ya-Pei Kuo Peng-Yu Chen Leo Tsai Ming-Yi Lin |
| author_facet | Chun-Yu Lee Yi-Min Chen Yao-Zong Deng Ya-Pei Kuo Peng-Yu Chen Leo Tsai Ming-Yi Lin |
| author_sort | Chun-Yu Lee |
| collection | DOAJ |
| description | In this study, we report on the application of a dielectric/ultra-thin metal/dielectric (DMD) multilayer consisting of ytterbium (Yb)-doped molybdenum oxide (MoO<sub>3</sub>)/silver (Ag)/MoO<sub>3</sub> stacked as the transparent cathode in top-emitting green quantum dot light-emitting diodes (QLED). By optimizing the Yb doping ratio, we have highly improved the electron injection ability from 0.01 to 0.35. In addition, the dielectric/ultra-thin metal/dielectric (DMD) cathode also shows a low sheet resistance of only 12.2 Ω/sq, which is superior to the resistance of the commercially-available indium tin oxide (ITO) electrode (~15 Ω/sq). The DMD multilayer exhibits a maximum transmittance of 75% and an average transmittance of 70% over the visible range of 400–700 nm. The optimized DMD-based G-QLED has a smaller current leakage at low driving voltage. The optimized DMD-based G-QLED enhances the current density than that of G-QLED with indium zinc oxide (IZO) as a cathode. The fabricated DMD-based G-QLED shows a low turn-on voltage of 2.2 V, a high current efficiency of 38 cd/A, and external quantum efficiency of 9.8. These findings support the fabricated DMD multilayer as a promising cathode for transparent top-emitting diodes. |
| first_indexed | 2024-03-10T20:43:31Z |
| format | Article |
| id | doaj.art-035796ff365f4fa89fac84f2f0176ed1 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-10T20:43:31Z |
| publishDate | 2020-04-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-035796ff365f4fa89fac84f2f0176ed12023-11-19T20:29:25ZengMDPI AGNanomaterials2079-49912020-04-0110466310.3390/nano10040663Yb:MoO<sub>3</sub>/Ag/MoO<sub>3</sub> Multilayer Transparent Top Cathode for Top-Emitting Green Quantum Dot Light-Emitting DiodesChun-Yu Lee0Yi-Min Chen1Yao-Zong Deng2Ya-Pei Kuo3Peng-Yu Chen4Leo Tsai5Ming-Yi Lin6AU Optronics Corporation, Hsinchu 30078, TaiwanDepartment of Electrical Engineering, National United University, Miaoli 36003, TaiwanDepartment of Electrical Engineering, National United University, Miaoli 36003, TaiwanAU Optronics Corporation, Hsinchu 30078, TaiwanAU Optronics Corporation, Hsinchu 30078, TaiwanAU Optronics Corporation, Hsinchu 30078, TaiwanDepartment of Electrical Engineering, National United University, Miaoli 36003, TaiwanIn this study, we report on the application of a dielectric/ultra-thin metal/dielectric (DMD) multilayer consisting of ytterbium (Yb)-doped molybdenum oxide (MoO<sub>3</sub>)/silver (Ag)/MoO<sub>3</sub> stacked as the transparent cathode in top-emitting green quantum dot light-emitting diodes (QLED). By optimizing the Yb doping ratio, we have highly improved the electron injection ability from 0.01 to 0.35. In addition, the dielectric/ultra-thin metal/dielectric (DMD) cathode also shows a low sheet resistance of only 12.2 Ω/sq, which is superior to the resistance of the commercially-available indium tin oxide (ITO) electrode (~15 Ω/sq). The DMD multilayer exhibits a maximum transmittance of 75% and an average transmittance of 70% over the visible range of 400–700 nm. The optimized DMD-based G-QLED has a smaller current leakage at low driving voltage. The optimized DMD-based G-QLED enhances the current density than that of G-QLED with indium zinc oxide (IZO) as a cathode. The fabricated DMD-based G-QLED shows a low turn-on voltage of 2.2 V, a high current efficiency of 38 cd/A, and external quantum efficiency of 9.8. These findings support the fabricated DMD multilayer as a promising cathode for transparent top-emitting diodes.https://www.mdpi.com/2079-4991/10/4/663QLEDstop-emissionDMDtransparent cathode |
| spellingShingle | Chun-Yu Lee Yi-Min Chen Yao-Zong Deng Ya-Pei Kuo Peng-Yu Chen Leo Tsai Ming-Yi Lin Yb:MoO<sub>3</sub>/Ag/MoO<sub>3</sub> Multilayer Transparent Top Cathode for Top-Emitting Green Quantum Dot Light-Emitting Diodes Nanomaterials QLEDs top-emission DMD transparent cathode |
| title | Yb:MoO<sub>3</sub>/Ag/MoO<sub>3</sub> Multilayer Transparent Top Cathode for Top-Emitting Green Quantum Dot Light-Emitting Diodes |
| title_full | Yb:MoO<sub>3</sub>/Ag/MoO<sub>3</sub> Multilayer Transparent Top Cathode for Top-Emitting Green Quantum Dot Light-Emitting Diodes |
| title_fullStr | Yb:MoO<sub>3</sub>/Ag/MoO<sub>3</sub> Multilayer Transparent Top Cathode for Top-Emitting Green Quantum Dot Light-Emitting Diodes |
| title_full_unstemmed | Yb:MoO<sub>3</sub>/Ag/MoO<sub>3</sub> Multilayer Transparent Top Cathode for Top-Emitting Green Quantum Dot Light-Emitting Diodes |
| title_short | Yb:MoO<sub>3</sub>/Ag/MoO<sub>3</sub> Multilayer Transparent Top Cathode for Top-Emitting Green Quantum Dot Light-Emitting Diodes |
| title_sort | yb moo sub 3 sub ag moo sub 3 sub multilayer transparent top cathode for top emitting green quantum dot light emitting diodes |
| topic | QLEDs top-emission DMD transparent cathode |
| url | https://www.mdpi.com/2079-4991/10/4/663 |
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