Phosphorene-assisted silicon photonic modulator with fast response time
All-optical modulators avoid the conversion from external electronic signals to optical signals and thus have the potential to achieve an energy-efficient high-speed photonic system. Phosphorene recently debuted as an attractive material that exhibits outstanding high electron mobility, strong light...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
De Gruyter
2020-02-01
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| Series: | Nanophotonics |
| Subjects: | |
| Online Access: | https://doi.org/10.1515/nanoph-2019-0510 |
| _version_ | 1819122015588581376 |
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| author | Cheng Zhao Cao Rui Guo Jia Yao Yuhan Wei Kangkang Gao Shan Wang Yunzheng Dong Jianji Zhang Han |
| author_facet | Cheng Zhao Cao Rui Guo Jia Yao Yuhan Wei Kangkang Gao Shan Wang Yunzheng Dong Jianji Zhang Han |
| author_sort | Cheng Zhao |
| collection | DOAJ |
| description | All-optical modulators avoid the conversion from external electronic signals to optical signals and thus have the potential to achieve an energy-efficient high-speed photonic system. Phosphorene recently debuted as an attractive material that exhibits outstanding high electron mobility, strong light-matter interaction and modifiable bandgap, making it ideal for all-optical modulators. In this paper, by incorporating a phosphorene and silicon-based micro-ring resonator (MRR), we first propose and experimentally demonstrate a unique phosphorene-integrated all-optical modulator in telecommunications. By utilizing a phosphorene thin film with an average thickness of 22 nm as the absorption material, the rise time of only 479 ns and decay time of 113 ns are achieved, which is the fastest reported response time in the family of phosphorene modulators. The corresponding 3 dB bandwidth is larger than 2.5 MHz, and it exhibits a low-loss performance benefited from its finite bandgap. The proposed phosphorene/MRR hybrid modulator may have potential in the applications of all-optical interconnections. |
| first_indexed | 2024-12-22T06:45:44Z |
| format | Article |
| id | doaj.art-038be291f09f4b80949daed53853779c |
| institution | Directory Open Access Journal |
| issn | 2192-8606 2192-8614 |
| language | English |
| last_indexed | 2024-12-22T06:45:44Z |
| publishDate | 2020-02-01 |
| publisher | De Gruyter |
| record_format | Article |
| series | Nanophotonics |
| spelling | doaj.art-038be291f09f4b80949daed53853779c2022-12-21T18:35:17ZengDe GruyterNanophotonics2192-86062192-86142020-02-01971973197910.1515/nanoph-2019-0510nanoph-2019-0510Phosphorene-assisted silicon photonic modulator with fast response timeCheng Zhao0Cao Rui1Guo Jia2Yao Yuhan3Wei Kangkang4Gao Shan5Wang Yunzheng6Dong Jianji7Zhang Han8Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 430074 Wuhan, P.R. ChinaInstitute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, P.R. ChinaInstitute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, P.R. ChinaWuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 430074 Wuhan, P.R. ChinaWuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 430074 Wuhan, P.R. ChinaInstitute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, P.R. ChinaInstitute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, P.R. ChinaWuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 430074 Wuhan, P.R. ChinaInstitute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, P.R. ChinaAll-optical modulators avoid the conversion from external electronic signals to optical signals and thus have the potential to achieve an energy-efficient high-speed photonic system. Phosphorene recently debuted as an attractive material that exhibits outstanding high electron mobility, strong light-matter interaction and modifiable bandgap, making it ideal for all-optical modulators. In this paper, by incorporating a phosphorene and silicon-based micro-ring resonator (MRR), we first propose and experimentally demonstrate a unique phosphorene-integrated all-optical modulator in telecommunications. By utilizing a phosphorene thin film with an average thickness of 22 nm as the absorption material, the rise time of only 479 ns and decay time of 113 ns are achieved, which is the fastest reported response time in the family of phosphorene modulators. The corresponding 3 dB bandwidth is larger than 2.5 MHz, and it exhibits a low-loss performance benefited from its finite bandgap. The proposed phosphorene/MRR hybrid modulator may have potential in the applications of all-optical interconnections.https://doi.org/10.1515/nanoph-2019-0510phosphorenemodulatorsall-optical devicesintegrated optics devices |
| spellingShingle | Cheng Zhao Cao Rui Guo Jia Yao Yuhan Wei Kangkang Gao Shan Wang Yunzheng Dong Jianji Zhang Han Phosphorene-assisted silicon photonic modulator with fast response time Nanophotonics phosphorene modulators all-optical devices integrated optics devices |
| title | Phosphorene-assisted silicon photonic modulator with fast response time |
| title_full | Phosphorene-assisted silicon photonic modulator with fast response time |
| title_fullStr | Phosphorene-assisted silicon photonic modulator with fast response time |
| title_full_unstemmed | Phosphorene-assisted silicon photonic modulator with fast response time |
| title_short | Phosphorene-assisted silicon photonic modulator with fast response time |
| title_sort | phosphorene assisted silicon photonic modulator with fast response time |
| topic | phosphorene modulators all-optical devices integrated optics devices |
| url | https://doi.org/10.1515/nanoph-2019-0510 |
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