Resistive switching and battery-like characteristics in highly transparent Ta2O5/ITO thin-films
Abstract Highly transparent resistive-switching (RS) devices were fabricated by growing amorphous tantalum pentoxide (a-Ta2O5) and indium tin oxide (a-ITO) thin films on barium-borosilicate glass (7059) substrates, using electron beam evaporation. These layers exhibited the transmittance greater tha...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2023-08-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-023-40891-2 |
| _version_ | 1797559587649355776 |
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| author | Darshika Khone Sandeep Kumar Mohammad Balal Sudipta Roy Barman Sunil Kumar Abhimanyu Singh Rana |
| author_facet | Darshika Khone Sandeep Kumar Mohammad Balal Sudipta Roy Barman Sunil Kumar Abhimanyu Singh Rana |
| author_sort | Darshika Khone |
| collection | DOAJ |
| description | Abstract Highly transparent resistive-switching (RS) devices were fabricated by growing amorphous tantalum pentoxide (a-Ta2O5) and indium tin oxide (a-ITO) thin films on barium-borosilicate glass (7059) substrates, using electron beam evaporation. These layers exhibited the transmittance greater than ~ 85% in the full visible region and showed RS behavior and battery-like IV characteristics. The overall characteristics of RS can be tuned using the top electrode and the thickness of a-Ta2O5. Thinner films showed a conventional RS behavior, while thicker films with metal electrodes showed a battery-like characteristic, which could be explained by additional redox reactions and non-Faradaic capacitive effects. Devices having battery-like IV characteristics showed higher enhanced, retention and low-operation current. |
| first_indexed | 2024-03-10T17:47:31Z |
| format | Article |
| id | doaj.art-03b4978e4e8e46819eebd0e17993f0ef |
| institution | Directory Open Access Journal |
| issn | 2045-2322 |
| language | English |
| last_indexed | 2024-03-10T17:47:31Z |
| publishDate | 2023-08-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj.art-03b4978e4e8e46819eebd0e17993f0ef2023-11-20T09:27:21ZengNature PortfolioScientific Reports2045-23222023-08-0113111110.1038/s41598-023-40891-2Resistive switching and battery-like characteristics in highly transparent Ta2O5/ITO thin-filmsDarshika Khone0Sandeep Kumar1Mohammad Balal2Sudipta Roy Barman3Sunil Kumar4Abhimanyu Singh Rana5Centre for Advanced Materials and Devices, School of Engineering and Technology, BML Munjal UniversityDepartment of Physics, Indian Institute of Technology DelhiUGC-DAE Consortium for Scientific ResearchUGC-DAE Consortium for Scientific ResearchDepartment of Physics, Indian Institute of Technology DelhiCentre for Advanced Materials and Devices, School of Engineering and Technology, BML Munjal UniversityAbstract Highly transparent resistive-switching (RS) devices were fabricated by growing amorphous tantalum pentoxide (a-Ta2O5) and indium tin oxide (a-ITO) thin films on barium-borosilicate glass (7059) substrates, using electron beam evaporation. These layers exhibited the transmittance greater than ~ 85% in the full visible region and showed RS behavior and battery-like IV characteristics. The overall characteristics of RS can be tuned using the top electrode and the thickness of a-Ta2O5. Thinner films showed a conventional RS behavior, while thicker films with metal electrodes showed a battery-like characteristic, which could be explained by additional redox reactions and non-Faradaic capacitive effects. Devices having battery-like IV characteristics showed higher enhanced, retention and low-operation current.https://doi.org/10.1038/s41598-023-40891-2 |
| spellingShingle | Darshika Khone Sandeep Kumar Mohammad Balal Sudipta Roy Barman Sunil Kumar Abhimanyu Singh Rana Resistive switching and battery-like characteristics in highly transparent Ta2O5/ITO thin-films Scientific Reports |
| title | Resistive switching and battery-like characteristics in highly transparent Ta2O5/ITO thin-films |
| title_full | Resistive switching and battery-like characteristics in highly transparent Ta2O5/ITO thin-films |
| title_fullStr | Resistive switching and battery-like characteristics in highly transparent Ta2O5/ITO thin-films |
| title_full_unstemmed | Resistive switching and battery-like characteristics in highly transparent Ta2O5/ITO thin-films |
| title_short | Resistive switching and battery-like characteristics in highly transparent Ta2O5/ITO thin-films |
| title_sort | resistive switching and battery like characteristics in highly transparent ta2o5 ito thin films |
| url | https://doi.org/10.1038/s41598-023-40891-2 |
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