Formation of porous Ga oxide with high-aspect-ratio nanoholes by anodizing single Ga crystal
Abstract I developed a simple crystal growth process to obtain a single Ga crystal. The crystal orientation of a Ga plate could be controlled by a crystal growth process using a seed Ga crystal. By anodizing a [100]-direction highly oriented Ga plate, I realized the formation of a highly ordered arr...
| Main Author: | |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2023-07-01
|
| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-023-39624-2 |
| _version_ | 1797752739383476224 |
|---|---|
| author | Toshiaki Kondo |
| author_facet | Toshiaki Kondo |
| author_sort | Toshiaki Kondo |
| collection | DOAJ |
| description | Abstract I developed a simple crystal growth process to obtain a single Ga crystal. The crystal orientation of a Ga plate could be controlled by a crystal growth process using a seed Ga crystal. By anodizing a [100]-direction highly oriented Ga plate, I realized the formation of a highly ordered array of high-aspect-ratio straight nanoholes. It was observed that the nanohole growth direction depends on the crystal orientation of a Ga plate. To date, this dependence has yet to be observed in materials other than porous Ga oxide obtained by an anodization process. The present fabrication process is expected to be applied to the fabrication of various functional devices requiring a porous Ga oxide with high-aspect-ratio straight nanoholes, such as hydrogen formation devices and functional filters. |
| first_indexed | 2024-03-12T17:07:49Z |
| format | Article |
| id | doaj.art-03f7d47c339846d89dea7bb210a6dae6 |
| institution | Directory Open Access Journal |
| issn | 2045-2322 |
| language | English |
| last_indexed | 2024-03-12T17:07:49Z |
| publishDate | 2023-07-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj.art-03f7d47c339846d89dea7bb210a6dae62023-08-06T11:14:56ZengNature PortfolioScientific Reports2045-23222023-07-011311810.1038/s41598-023-39624-2Formation of porous Ga oxide with high-aspect-ratio nanoholes by anodizing single Ga crystalToshiaki Kondo0Department of Mechanical Systems Engineering, Aichi University of TechnologyAbstract I developed a simple crystal growth process to obtain a single Ga crystal. The crystal orientation of a Ga plate could be controlled by a crystal growth process using a seed Ga crystal. By anodizing a [100]-direction highly oriented Ga plate, I realized the formation of a highly ordered array of high-aspect-ratio straight nanoholes. It was observed that the nanohole growth direction depends on the crystal orientation of a Ga plate. To date, this dependence has yet to be observed in materials other than porous Ga oxide obtained by an anodization process. The present fabrication process is expected to be applied to the fabrication of various functional devices requiring a porous Ga oxide with high-aspect-ratio straight nanoholes, such as hydrogen formation devices and functional filters.https://doi.org/10.1038/s41598-023-39624-2 |
| spellingShingle | Toshiaki Kondo Formation of porous Ga oxide with high-aspect-ratio nanoholes by anodizing single Ga crystal Scientific Reports |
| title | Formation of porous Ga oxide with high-aspect-ratio nanoholes by anodizing single Ga crystal |
| title_full | Formation of porous Ga oxide with high-aspect-ratio nanoholes by anodizing single Ga crystal |
| title_fullStr | Formation of porous Ga oxide with high-aspect-ratio nanoholes by anodizing single Ga crystal |
| title_full_unstemmed | Formation of porous Ga oxide with high-aspect-ratio nanoholes by anodizing single Ga crystal |
| title_short | Formation of porous Ga oxide with high-aspect-ratio nanoholes by anodizing single Ga crystal |
| title_sort | formation of porous ga oxide with high aspect ratio nanoholes by anodizing single ga crystal |
| url | https://doi.org/10.1038/s41598-023-39624-2 |
| work_keys_str_mv | AT toshiakikondo formationofporousgaoxidewithhighaspectrationanoholesbyanodizingsinglegacrystal |