Low-Temperature, Chemically Grown Titanium Oxide Thin Films with a High Hole Tunneling Rate for Si Solar Cells
In this paper, we propose a chemically grown titanium oxide (TiO2) on Si to form a heterojunction for photovoltaic devices. The chemically grown TiO2 does not block hole transport. Ultraviolet photoemission spectroscopy was used to study the band alignment. A substantial band offset at the TiO2/Si i...
Main Authors: | Yu-Tsu Lee, Fang-Ru Lin, Ting-Chun Lin, Chien-Hsun Chen, Zingway Pei |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2016-05-01
|
Series: | Energies |
Subjects: | |
Online Access: | http://www.mdpi.com/1996-1073/9/6/402 |
Similar Items
-
Solution-Processed Titanium Oxide for Rear Contact Improvement in Heterojunction Solar Cells
by: Yu-Tsu Lee, et al.
Published: (2020-09-01) -
Novel SiGe/Si Heterojunction Double-Gate Tunneling FETs with a Heterogate Dielectric for High Performance
by: Qing Chen, et al.
Published: (2023-03-01) -
Hole preparation in titanium and high strength steels/
by: 215264 Fleming, C. M. -
Varying Newton Constant and Black Hole to White Hole Quantum Tunneling
by: Grigory Volovik
Published: (2020-08-01) -
Oxidation of Thin Titanium Films: Determination of the Chemical Composition of the Oxide and the Oxygen Diffusion Factor
by: Sergey Y. Sarvadii, et al.
Published: (2020-02-01)