Process of Au-Free Source/Drain Ohmic Contact to AlGaN/GaN HEMT
AlGaN/GaN high electron mobility transistors (HEMTs) are regarded as promising candidates for a 5G communication system, which demands higher frequency and power. Source/drain ohmic contact is one of the key fabrication processes crucial to the device performance. Firstly, Au-contained metal stacks...
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MDPI AG
2022-06-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/12/6/826 |
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| author | Lin-Qing Zhang Xiao-Li Wu Wan-Qing Miao Zhi-Yan Wu Qian Xing Peng-Fei Wang |
| author_facet | Lin-Qing Zhang Xiao-Li Wu Wan-Qing Miao Zhi-Yan Wu Qian Xing Peng-Fei Wang |
| author_sort | Lin-Qing Zhang |
| collection | DOAJ |
| description | AlGaN/GaN high electron mobility transistors (HEMTs) are regarded as promising candidates for a 5G communication system, which demands higher frequency and power. Source/drain ohmic contact is one of the key fabrication processes crucial to the device performance. Firstly, Au-contained metal stacks combined with RTA high-temperature ohmic contact schemes were presented and analyzed, including process conditions and contact formation mechanisms. Considering the issues with the Au-contained technique, the overview of a sequence of Au-free schemes is given and comprehensively discussed. In addition, in order to solve various problems caused by high-temperature conditions, novel annealing techniques including microwave annealing (MWA) and laser annealing (LA) were proposed to form Au-free low-temperature ohmic contact to AlGaN/GaN HEMT. The effects of the annealing method on surface morphology, gate leakage, dynamic on-resistance (R<sub>ON</sub>), and other device characteristics are investigated and presented in this paper. By using a low-temperature annealing atmosphere or selective annealing method, gate-first Si-CMOS compatible AlGaN/GaN HEMT technology can be realized for high frequency and power application. |
| first_indexed | 2024-03-10T00:02:55Z |
| format | Article |
| id | doaj.art-04173fae405645d49e3b04d4015d1464 |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-10T00:02:55Z |
| publishDate | 2022-06-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-04173fae405645d49e3b04d4015d14642023-11-23T16:12:32ZengMDPI AGCrystals2073-43522022-06-0112682610.3390/cryst12060826Process of Au-Free Source/Drain Ohmic Contact to AlGaN/GaN HEMTLin-Qing Zhang0Xiao-Li Wu1Wan-Qing Miao2Zhi-Yan Wu3Qian Xing4Peng-Fei Wang5College of Electronic and Electrical Engineering, Henan Normal University, No. 46 East of Construction Road, Xinxiang 453007, ChinaCollege of Electronic and Electrical Engineering, Henan Normal University, No. 46 East of Construction Road, Xinxiang 453007, ChinaCollege of Electronic and Electrical Engineering, Henan Normal University, No. 46 East of Construction Road, Xinxiang 453007, ChinaCollege of Electronic and Electrical Engineering, Henan Normal University, No. 46 East of Construction Road, Xinxiang 453007, ChinaCollege of Intelligent Engineering, Henan Institute of Technology, No. 699 Pingyuan Road (East Section), Xinxiang 453003, ChinaState Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, No. 220 Handan Road, Shanghai 200043, ChinaAlGaN/GaN high electron mobility transistors (HEMTs) are regarded as promising candidates for a 5G communication system, which demands higher frequency and power. Source/drain ohmic contact is one of the key fabrication processes crucial to the device performance. Firstly, Au-contained metal stacks combined with RTA high-temperature ohmic contact schemes were presented and analyzed, including process conditions and contact formation mechanisms. Considering the issues with the Au-contained technique, the overview of a sequence of Au-free schemes is given and comprehensively discussed. In addition, in order to solve various problems caused by high-temperature conditions, novel annealing techniques including microwave annealing (MWA) and laser annealing (LA) were proposed to form Au-free low-temperature ohmic contact to AlGaN/GaN HEMT. The effects of the annealing method on surface morphology, gate leakage, dynamic on-resistance (R<sub>ON</sub>), and other device characteristics are investigated and presented in this paper. By using a low-temperature annealing atmosphere or selective annealing method, gate-first Si-CMOS compatible AlGaN/GaN HEMT technology can be realized for high frequency and power application.https://www.mdpi.com/2073-4352/12/6/826AlGaN/GaNHEMTohmic contactAu-free low-temperature |
| spellingShingle | Lin-Qing Zhang Xiao-Li Wu Wan-Qing Miao Zhi-Yan Wu Qian Xing Peng-Fei Wang Process of Au-Free Source/Drain Ohmic Contact to AlGaN/GaN HEMT Crystals AlGaN/GaN HEMT ohmic contact Au-free low-temperature |
| title | Process of Au-Free Source/Drain Ohmic Contact to AlGaN/GaN HEMT |
| title_full | Process of Au-Free Source/Drain Ohmic Contact to AlGaN/GaN HEMT |
| title_fullStr | Process of Au-Free Source/Drain Ohmic Contact to AlGaN/GaN HEMT |
| title_full_unstemmed | Process of Au-Free Source/Drain Ohmic Contact to AlGaN/GaN HEMT |
| title_short | Process of Au-Free Source/Drain Ohmic Contact to AlGaN/GaN HEMT |
| title_sort | process of au free source drain ohmic contact to algan gan hemt |
| topic | AlGaN/GaN HEMT ohmic contact Au-free low-temperature |
| url | https://www.mdpi.com/2073-4352/12/6/826 |
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