Process of Au-Free Source/Drain Ohmic Contact to AlGaN/GaN HEMT

Process of Au-Free Source/Drain Ohmic Contact to AlGaN/GaN HEMT

AlGaN/GaN high electron mobility transistors (HEMTs) are regarded as promising candidates for a 5G communication system, which demands higher frequency and power. Source/drain ohmic contact is one of the key fabrication processes crucial to the device performance. Firstly, Au-contained metal stacks...

Full description

Bibliographic Details
Main Authors: Lin-Qing Zhang, Xiao-Li Wu, Wan-Qing Miao, Zhi-Yan Wu, Qian Xing, Peng-Fei Wang
Format: Article
Language:English
Published: MDPI AG 2022-06-01
Series:Crystals
Subjects:
AlGaN/GaN
HEMT
ohmic contact
Au-free low-temperature
Online Access:https://www.mdpi.com/2073-4352/12/6/826

Similar Items

Similar Items